A semiconductor sensing device generates an output based on a sensor. A connection point of an output circuit constituted by first and second switching output elements connected so as to be complementary is connected to an output terminal. Between the first switching output element and the connection point of the output circuit, a first switching element is connected. Between the second switching output element and the connection point of the output circuit, a second switching element is connected. When voltage of the output terminal is a voltage lower than a lower limit clamp voltage, the first switching element turns OFF. When the voltage of the output terminal is a voltage higher than an upper limit clamp voltage, the second switching element turns OFF.

An electric device for detecting pressure and a pressure sensor includes an electric current channel arranged to conduct an electric current, wherein the electric current channel is disposed adjacent or proximate to a pressure sensitive structure. Upon the pressure sensitive structure being subjected to a change of an external pressure, the pressure sensitive structure is arranged to manipulate a first electrical characteristic of the electric current channel.

The invention relates to an ultrasonic flowmeter for measuring the flow speed and/or the volumetric flow rate of a fluid. In order in particular to allow a simple and inexpensive calibration of a pressure sensor in the device, the device comprising a measurement sensor, at least two ultrasonic transducers, a pressure sensor, and a calibration connector.

A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.

An apparatus for calculating a thermal conductivity of a gaseous substance is provided. The apparatus includes a substrate; a cover member disposed on the substrate, wherein the cover member comprises a flow tunnel for the gaseous substance; a flow sensing element disposed on the substrate, wherein the flow sensing element is exposed to the gaseous substance in the flow tunnel; and a pressure sensing element disposed on the substrate, wherein the pressure sensing element is exposed to the gaseous substance in the flow tunnel.

A pressure sensor includes: a substrate having first and second main surfaces and having a thickness in first direction; a first chamber recessed from the first main surface in the first direction with respect to the substrate; a second chamber recessed from the first main surface in the first direction with respect to the substrate and adjacent to the first chamber in second direction; a fluid passage recessed from the first main surface in the first direction with respect to the substrate and causing the first chamber to be in fluid communication with an outside; a closing layer laminated on the first main surface of the substrate and closing openings of the first chamber and the second chamber; and a membrane partitioned by the first and second chambers in the second direction and extending in a plane parallel to the first direction and a third direction.

A device comprising: a stack of layers defining an array of transistors, wherein the stack of layers includes a surface conductor pattern defining (i) an array of gate conductors each providing the gate electrodes for a respective column of transistors, and (ii) an array of pixel conductors, each pixel conductor associated with a respective transistor, and connected via a semiconductor channel of the respective transistor to one of an array of row conductors, each row conductor associated with a respective row of transistors; wherein each gate conductor is configured to extend substantially completely around the pixel conductors of the respective column of transistors associated with the gate conductor.

A mass flow controller for controlling flow rate comprising a controller, a valve assembly, and at least one pressure sensor, valve position sensor, and temperature sensor; wherein, at least one of the sensors is a semiconductor based sensor. The valve assembly is in fluid communication with at least one upstream location and at least one downstream location. The at least one pressure sensor is in in fluid communication with the at least one upstream location and the at least one downstream location. The valve assembly can comprise at least one piezoelectric or solenoid valve. The controller is communicable coupled with the valve assembly and at least one of the sensors. The controller determines at least one of: pressure; position; and temperature. The controller further causes an adjustment to valve stroke based on an actual fluid flow rate and at least one of the pressure, position, temperature, and a predetermined value.

An apparatus for calculating a thermal conductivity of a gaseous substance is provided. The apparatus includes a substrate; a cover member disposed on the substrate, wherein the cover member comprises a flow tunnel for the gaseous substance; a flow sensing element disposed on the substrate, wherein the flow sensing element is exposed to the gaseous substance in the flow tunnel; and a pressure sensing element disposed on the substrate, wherein the pressure sensing element is exposed to the gaseous substance in the flow tunnel.

A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.