An analyzer capable of suppressing the generation of noise in a current detection circuit is provided. On a board 61, a current detection circuit 60 for processing an output signal from a detector is mounted. The cover member 63 has a space 630 in which the current detection circuit 60 is accommodated. A gas is supplied from a gas source into the space 630. The cover member 63 is provided with an inlet port 633 for introducing the gas from the gas source into the space 630 and an outlet port 634 for discharging the gas in the space 630.

An analyzer capable of suppressing the generation of noise in a current detection circuit is provided. On a board 61, a current detection circuit 60 for processing an output signal from a detector is mounted. The cover member 63 has a space 630 in which the current detection circuit 60 is accommodated. A gas is supplied from a gas source into the space 630. The cover member 63 is provided with an inlet port 633 for introducing the gas from the gas source into the space 630 and an outlet port 634 for discharging the gas in the space 630.

Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.

Provided is an ion sensor including a supporting substrate, a plurality of cells, a silicon substrate, a plurality of transistors, and an analog-digital conversion circuit. The plurality of cells, the plurality of transistors, and the analog-digital conversion circuit are provided above the supporting substrate. Each of the plurality of transistors has a corresponding gate provided on a first surface of the silicon substrate. The analog-digital conversion circuit is provided on the silicon substrate. The ion-sensing surface is provided on a second surface of the silicon substrate. The second surface is opposite to the first surface.