An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

A device to host a crystallization medium, such as a solution, for crystal growth and a system for X-ray diffraction experiments to determine the atomic structure of crystals. A plurality of cells have a well, a sample holder placed in the well. The solution is hosted in the sample holder between thin-plates or one thin-plate. A cap seals an opening to the cell and each sample holder can be extracted independently from each well. A system for automated X-ray diffraction experiments for small crystals in the sample holder extracted from the wells utilizes an ultrasonic acoustic levitator to determine the crystal structure at atomic resolution. X-ray diffraction images are generated by scanning the X-ray beam over the levitated sample holder along a spiral trajectory by rotating the sample holder and moving in the direction perpendicular to the X-ray beam and the rotation axis at the same time.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

Methods and systems for measuring structural and material characteristics of semiconductor structures based on wavelength resolved, soft x-ray reflectometry (WR-SXR) at multiple diffraction orders are presented. WR-SXR measurements are simultaneous, high throughput measurements over multiple diffraction orders with broad spectral width. The availability of wavelength resolved signal information at each of the multiple diffraction orders improves measurement accuracy and throughput. Each non-zero diffraction order includes multiple measurement points, each different measurement point associated with a different wavelength. In some embodiments, WR-SXR measurements are performed with x-ray radiation energy in a range of 10-5,000 electron volts at grazing angles of incidence in a range of 1-45 degrees. In some embodiments, the illumination beam is controlled to have relatively high divergence in one direction and relatively low divergence in a second direction, orthogonal to the first direction. In some embodiments, multiple detectors are employed, each detecting different diffraction orders.

In an embodiment, a method for determining the concentration of an element of a heteroepitaxial layer includes generating a reciprocal space map in Q.sub.z and Q.sub.x directions in a portion of reciprocal space describing positions of diffracted X-ray peaks of a heteroepitaxial layer and of a substrate on which the heteroepitaxial layer is positioned, determining the position of a diffracted X-ray peak of the substrate in the reciprocal space map in the Q.sub.x direction, determining the expected position of the diffracted X-ray peak of the heteroepitaxial layer in the Q.sub.x direction based on the determined position of the diffracted X-ray peak of the substrate in the Q.sub.x direction, generating a scan of the heteroepitaxial layer in a Q.sub.z direction at the expected position in the Q.sub.x direction, and determining the concentration of a constituent element of the heteroepitaxial layer based on the scan.

The present invention relates to a recrystallization rate measurement method of zirconium alloy cladding of a nuclear fuel rod, the method including: step 1 of irradiating SEM electron beams at a given scanning interval onto a first specimen to a third specimen which were electrolytically polished and obtaining electron backscattered signals therefrom by an EBSD camera; step 2 of converting electron backscattered signals obtained in step 1 into pattern quality values, respectively, and generating the pattern quality values as frequencies by a specified interval; step 3 of obtaining pattern quality frequencies (B+D) which are a portion of a whole frequency distribution of the second specimen, and pattern quality frequencies (D+E) which are a portion of a whole frequency distribution of the first specimen; and step 4 of obtaining the recrystallization rate of the second specimen with an equation of $X^{}=\frac{\left(B+D\right)}{\left(D+E\right)}100,\%.$

A device to host a crystallization medium, such as a solution, for crystal growth and a system for X-ray diffraction experiments to determine the atomic structure of crystals. A plurality of cells have a well, a sample holder placed in the well. The solution is hosted in the sample holder between thin-plates or one thin-plate. A cap seals an opening to the cell and each sample holder can be extracted independently from each well. A system for automated X-ray diffraction experiments for small crystals in the sample holder extracted from the wells utilizes an ultrasonic acoustic levitator to determine the crystal structure at atomic resolution. X-ray diffraction images are generated by scanning the X-ray beam over the levitated sample holder along a spiral trajectory by rotating the sample holder and moving in the direction perpendicular to the X-ray beam and the rotation axis at the same time.

There is presented a screening system and a corresponding method for screening an item. The screening system includes a detection apparatus (100), a rotatable platform (310) to receive the item, and a mechanical arrangement (320, 330). The detection apparatus has an emitter portion to generate a primary beam of ionising radiation and a detector portion to detect an absorption signal and at least one of a diffraction signal and a scattering signal. The mechanical arrangement is adapted to translate the detection apparatus along a translation axis to scan the item with the primary beam. The screening system may be used for identifying restricted or illicit substances that may be present in some luggage or in mail.

There is presented a screening system and a corresponding method for screening an item. The screening system includes a detection apparatus (100), a rotatable platform (310) to receive the item, and a mechanical arrangement (320, 330). The detection apparatus has an emitter portion to generate a primary beam of ionising radiation and a detector portion to detect an absorption signal and at least one of a diffraction signal and a scattering signal. The mechanical arrangement is adapted to translate the detection apparatus along a translation axis to scan the item with the primary beam. The screening system may be used for identifying restricted or illicit substances that may be present in some luggage or in mail.