Estimating wear on bottom hole assembly (BHA) components utilizes a rock hardness index using analysis of drill cutting. Estimating the amount of wear on borehole assembly components comprises measuring the rock properties in drilled cuttings from a borehole. A hardness value is assigned to each mineral present in the drilled cuttings. A hardness index is calculated for a drilled borehole interval. A wear resistance factor is assigned to each BHA component of the BHA. The wear resistance factor depends on the wear resistance of each BHA component. A wear value for each BHA component is calculated based on the hardness index for the drilled borehole interval, the wear resistance of the BHA component, and drilling parameters.

Methods for using electron diffraction holography to investigate a sample, according to the present disclosure include the initial steps of emitting a plurality of electrons toward the sample, forming the plurality of electrons into a first electron beam and a second electron beam, and modifying the focal properties of at least one of the two beams such that the two beams have different focal planes. Once the two beams have different focal planes, the methods include focusing the first electron beam such that it has a focal plane at or near the sample, and focusing the second electron beam so that it is incident on the sample, and has a focal plane in the diffraction plane. An interference pattern of the first electron beam and the diffracted second electron beam is then detected in the diffraction plane, and then used to generate a diffraction holograph.

A measurement device includes an analyzer configured to analyze a diffraction image of X-rays scattered from a subject; estimate a surface contour shape of a measurement area of the subject; extract feature data from shape information, and determine shape parameters for representing the surface contour shape; calculate a theoretical scattering intensity of each of the scattered X-rays when values of the shape parameters are changed; calculate a difference between a measured scattering intensity of each scattered X-ray and the corresponding theoretical scattering intensity, and generate a regression model of a relationship between a corresponding value of the shape parameter and the difference for each shape parameter; extract one shape parameter candidate value reducing the difference from the regression model, and calculate a theoretical scattering intensity of the shape parameter candidate value; and estimate the value of the shape parameter minimizing the difference while repeatedly changing the shape parameter candidate value.

Methods of introducing a small molecule into a crystal of a macromolecule, of obtaining a microcrystal having a macromolecule and a small molecule from a crystal of the macromolecule, of determining a structural model for a complex having a macromolecule and a small molecule, of identifying a small molecule that complexes with a macromolecule, and of screening a library of small molecules for their binding to a macromolecule are disclosed.

An apparatus for inspecting a semiconductor device according to an embodiment includes an X-ray irradiation unit configured to make monochromatic X-rays obliquely incident on the semiconductor device, which is an object at a predetermined angle of incidence, a detection unit configured to detect observed X-rays observed from the object using a plurality of two-dimensionally disposed photodetection elements, an analysis apparatus configured to generate X-ray diffraction images obtained by photoelectrically converting the observed X-rays, and a control unit configured to change an angle of incidence and a detection angle of the X-rays, in which the analysis apparatus acquires an X-ray diffraction image every time the angle of incidence is changed, extracts a peak X-ray diffraction image, X-ray intensity of which becomes maximum for each of pixels and compares the peak X-ray diffraction image among the pixels to thereby estimate a stress distribution of the object.

The invention relates to a method for processing images obtained by a diffraction detector, of a crystalline or polycrystalline material, in which a first image of the material is acquired in a state of reference as well as a second image of the material in a deformed state. The invention is characterised in that, in a calculator, during a first step (E6, E12), a current elastic deformation gradient tensor F.sup.e is given a value determined by calculation, during a second step (E7), the current displacement field induced by the tensor F.sup.e is calculated, during a third step (E8), third digital values of a deformed image {hacek over (g)}(x)=g(x+u(x)) corrected by the current displacement field are calculated, and during an iterative algorithm, iterations of the second and third steps (E12, E7, E8) are carried out on modified values of the tensor r F.sup.e until a convergence criterion is met in relation to the correction to the current value of F.sup.e.

A quantitative analysis apparatus, a method, a program, and a manufacturing control system are provided. A WPPF section 320 for determining parameters of theoretical diffraction intensity by performing whole powder pattern fitting with respect to an X-ray diffraction profile to be analyzed, a scale factor acquiring section 325 for acquiring a scale factor of a test component among the determined parameters, a calibration curve storing section 350 for storing a calibration curve indicating a correlation between scale factors of the test component acquired with respect to a standard sample and content ratios of the test component in the standard sample, and a conversion section 370 for converting the scale factor of the test component acquired with respect to an objective sample into the content ratio of the test component in the objective sample using the stored calibration curve, are comprised.

A measured pattern acquisition unit acquires a measured X-ray scattering pattern of a sample containing a target substance and another known mixed substance. A known pattern acquisition unit acquires a known X-ray scattering pattern of the other known mixed substance. A crystalline pattern acquisition unit at least partially acquires an X-ray diffraction pattern of a crystalline portion included in the target substance. A crystalline integrated intensity calculation unit calculates an integrated intensity for the acquired X-ray diffraction pattern of the crystalline portion. A target substance integrated intensity calculation unit calculates an integrated intensity for an X-ray scattering pattern of the target substance. A degree-of-crystallinity calculation unit calculates a degree of crystallinity of the target substance based on the integrated intensity for the X-ray diffraction pattern of the crystalline portion and the integrated intensity for the X-ray scattering pattern of the target substance.

A process for quantifying the amount of unbound metal and bound metal in solution is provided. A process for quantifying the amount of bound metal amino acid chelate and free ligand in a solid (e.g., dry mixture such as an animal feed) is also provided.

A sample holder (3) for performing X-ray analysis on a crystalline sample (11) comprises a mounting support with a first end that can be attached to a goniometer head, whereby the crystalline sample (11) can be attached to the mounting support at a distance to the first end. The sample holder (3) further comprises a holder base at the first end of the mounting support with means for mounting the holder base to the goniometer head, whereby the holder base is configured to fit into a well (2) of a well plate (1). The holder base comprises a ferromagnetic material for mounting the holder base to a magnetic base element at or within the goniometer head. The mounting support comprises a tube preferably made of glass into which the crystalline sample (11) can be inserted. The sample holder (3) can also comprise a base disk (14) that provides for a lid for a well (2) of the well plate (1) after insertion of the sample holder (3) into the well (2). The holder base can also comprise a holder ring (7) that is arranged at the first end of the mounting support and that surrounds the mounting support in a circumferential manner The base disk (14) can be removably attachable to the holder ring (7). A crystalline sponge is attached to the mounting support.