Disclosed herein is a method comprising: causing emission of characteristic X-rays of a first element attached to a first biological analyte; causing emission of characteristic X-rays of a second element attached to a second biological analyte; detecting a characteristic of the first biological analyte based on the characteristic X-rays of the first element and a characteristic of the second biological analyte based on the characteristic X-rays of the second element; wherein the first element and the second element are different; wherein the first biological analyte and the second biological analyte are in the same solution.

Disclosed is an X-ray sensor having an active detector region including detector diodes on its surface. The X-ray sensor further includes a junction termination surrounding the surface region including the detector diodes. The junction termination includes a guard arranged closest to the end of the surface region, a field stop outside the guard and at least two field limiting rings, FLRs arranged between the guard and the field stop. A first FLR is arranged at a distance Δ.sub.1 from the guard selected from the interval [4 μm; 12 μm], a second FLR is arranged at a distance Δ.sub.2 from the first FLR selected from the interval [6.5 μm; 14 μm], and wherein the distance Δ.sub.2 is larger than the distance Δ.sub.1. The proposed technology also provides a method for constructing such an X-ray sensor and an X-ray imaging system including an X-ray detector system that includes such X-ray sensor.

A digital X-ray detector panel and an X-ray system including the same are disclosed, which include a Gate-In-Panel (GIP) structure in which a gate driver element is embedded in the panel, reduce production costs, and are easily applied to a narrow bezel and a flexible panel. A light shielding layer including tungsten or copper having X-ray shielding characteristics is disposed in a gate driver element mounting region, minimizing X-ray damage to the gate driver element embedded in the panel. In order to prevent not only damage caused by X-rays vertically incident upon the panel, but also damage caused by X-rays incident upon the panel at an incidence angle of less than 90, the light shielding layer extends to overlap at least a portion of the gate driver element mounting region.

Disclosed is an X-ray sensor having an active detector region including detector diodes on its surface. The X-ray sensor further includes a junction termination surrounding the surface region including the detector diodes. The junction termination includes a guard arranged closest to the end of the surface region, a field stop outside the guard and at least two field limiting rings, FLRs arranged between the guard and the field stop. A first FLR is arranged at a distance .sub.1 from the guard selected from the interval [4 m; 12 m], a second FLR is arranged at a distance .sub.2 from the first FLR selected from the interval [6.5 m; 14 m], and wherein the distance .sub.2 is larger than the distance .sub.1. The proposed technology also provides a method for constructing such an X-ray sensor and an X-ray imaging system including an X-ray detector system that includes such X-ray sensor.

A digital X-ray detector panel and an X-ray system including the same are disclosed, which include a Gate-In-Panel (GIP) structure in which a gate driver element is embedded in the panel, reduce production costs, and are easily applied to a narrow bezel and a flexible panel. A light shielding layer including tungsten or copper having X-ray shielding characteristics is disposed in a gate driver element mounting region, minimizing X-ray damage to the gate driver element embedded in the panel. In order to prevent not only damage caused by X-rays vertically incident upon the panel, but also damage caused by X-rays incident upon the panel at an incidence angle of less than 90, the light shielding layer extends to overlap at least a portion of the gate driver element mounting region.

A photodetector according to an embodiment includes; at least one photodiode including: a first electrode; an n-type semiconductor layer disposed on the first electrode; a first p-type semiconductor layer disposed above the n-type semiconductor layer, the first p-type semiconductor layer including a first surface region and a second surface region; a second p-type semiconductor layer disposed in the first surface region of the first p-type semiconductor layer, the second p-type semiconductor layer having a higher p-type impurity concentration than the first p-type semiconductor layer; and a second electrode disposed on the second surface region of the first p-type semiconductor layer and on the second p-type semiconductor layer.

An electron detector includes a detector body having a detector surface with an annular geometry and a central aperture configured to allow a focused electron beam to pass through the detector body toward a sample. The detector surface is configured to face the sample, and a plurality of detector devices are located on the detector surface. Each of the plurality of detector devices is configured to generate an electrical signal in response to interaction with an electron backscattered from the sample. According to various embodiments, the plurality of detector devices includes at least a first two detector devices separated from one another along a radial direction along the detector surface and at least a second two detector devices separated from one another along an angular direction along the detector surface. The detector devices are configured to determine both a polar incidence angle and an azimuthal incidence angle of detected electrons.