There is provided an acquiring method of a projection image of a sample whose shape is uneven with respect to a rotation center, the method comprising the steps of setting the sample S0 at a position of the rotation center C0 provided between an X-ray source 116a and a detector 117, and acquiring the projection image of the sample S0 at each different rotation angle for each different magnification ratio over a rotation angle of 180° or more by rotating the sample S0 around the rotation center C0, and by relatively changing a separation distance between the X-ray source and the rotation center, or a separation distance between the rotation center and the detector in an optical axis direction according to the shape of the sample S0 and the rotation angle of the sample S0.

Methods and systems for characterizing dimensions and material properties of semiconductor devices by transmission small angle x-ray scatterometry (TSAXS) systems having relatively small tool footprint are described herein. The methods and systems described herein enable Q space resolution adequate for metrology of semiconductor structures with reduced optical path length. In general, the x-ray beam is focused closer to the wafer surface for relatively small targets and closer to the detector for relatively large targets. In some embodiments, a high resolution detector with small point spread function (PSF) is employed to mitigate detector PSF limits on achievable Q resolution. In some embodiments, the detector locates an incident photon with sub-pixel accuracy by determining the centroid of a cloud of electrons stimulated by the photon conversion event. In some embodiments, the detector resolves one or more x-ray photon energies in addition to location of incidence.

The system for in-situ real-time measurements of microstructure properties of 3D-printing objects during 3-D printing processes. An intensive parallel X-ray beam (with an adjustable beam size) impinges on a printing object and is diffracted on a crystal lattice of the printing material. The diffracted radiation impinges on a reflector formed with an array of reflector crystals mounted on an arcuated substrate. The diffracted beams reflected from the reflector crystals correspond to the diffraction intensity peaks produced by interaction of the crystal lattice of the printing material with the impinging X-ray beam. The intensities of the diffraction peaks are observed by detectors which produce corresponding output signals, which are processed to provide critical information on the crystal phase composition, which is closely related to the defects and performance of the printing objects. The subject in-situ technology provides an effective and efficient way to monitor, in real-time, the quality of 3D-printing parts during the 3-D printing process, with a significant potential for effective process control based on the reliable microstructure feedback.

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Production of perforated two-dimensional materials with holes of a desired size range, a narrow size distribution, and a high and uniform density remains a challenge, at least partially, due to physical and chemical inconsistencies from sheet-to-sheet of the two-dimensional material and surface contamination. This disclosure describes methods for monitoring and adjusting perforation or healing conditions in real-time to address inter- and intra-sheet variability. In situ or substantially simultaneous feedback on defect production or healing may be provided either locally or globally on a graphene or other two-dimensional sheet. The feedback data can be used to adjust perforation or healing parameters, such as the total dose or efficacy of the perforating radiation, to achieve the desired defect state.

An apparatus for X-ray topography includes a source assembly, a detector assembly, a scanning assembly and a processor. The source assembly is configured to direct multiple X-ray beams so as to irradiate multiple respective regions on a sample, wherein the regions partially overlap one another along a first axis of the sample and are offset relative to one another along a second axis of the sample that is orthogonal to the first axis. The detector assembly is configured to detect the X-ray beams diffracted from the sample and to produce respective electrical signals in response to the detected X-ray beams. The scanning assembly is configured to move the sample relative to the source assembly and the detector assembly along the second axis. The processor is configured to identify defects in the sample by processing the electrical signals, which are produced by the detector assembly while the sample is moved.

A sample (4) is created by cutting out a device on a plane (10-10). The device has a gate electrode (3) formed along a direction [2-1-10] on a plane c (0001) of a compound semiconductor (1) having a wurtzite structure. Edge dislocations having Burgers vectors of 1/3[2-1-10] and 1/3[−2110] and mixed dislocations having Burgers vectors of 1/3[2-1-13] and 1/3[−2113] are observed by making an electron beam (5) incident on the sample (4) from a direction [−1010] using a transmission electron microscope.

An electron beam inspection apparatus according to one aspect of the present invention includes an image acquisition mechanism to acquire a secondary electron image by scanning a substrate, on which a figure pattern is formed, with an electron beam, and detecting a secondary electron emitted due to irradiation with the electron beam by the scanning, a resize processing unit to perform, using design pattern data being a basis of the figure pattern, resize processing on the figure pattern to enlarge its size in a scan direction of the electron beam, a first developed image generation unit to generate, using the design pattern data which has not been resized, a first developed image by developing an image of a design pattern of a region corresponding to the secondary electron image, a second developed image generation unit to generate, using partial patterns enlarged by the resize processing in the figure pattern having been resized, a second developed image by developing an image of partial patterns in a region corresponding to the secondary electron image, a map generation unit to generate a pseudo defect candidate pixel map which can identify a pseudo defect candidate pixel that has no pattern in the first developed image and has a pattern in the second developed image, a reference image generation unit to generate a reference image of the region corresponding to the second electron image, and a comparison unit to compare, using the pseudo defect candidate pixel map, the second electron image with the reference image of the region corresponding to the second electron image.

A device for determining the microstructure of a metal product during metallurgical production of the metal product, the device having at least one X-ray source, at least one X-ray detector and at least one accommodating chamber, inside which the X-ray source and/or the X-ray detector is/are arranged and which has at least one window which is transparent to X-ray radiation. To allow reliable determination of the microstructure of a metal product during the metallurgical production thereof, the device includes at least one cooling installation for actively cooling the accommodating chamber.

Methods and apparatus for producing and assessing at least part of an object (2), the methods comprise: performing, using Additive Manufacturing apparatus (8), an Additive Manufacturing process to produce a test specimen (30, 34, 38) and at least part of an object (2); performing, using micro-tomography apparatus (40), on the test specimen (30, 34, 38), a micro-tomography process to create a digital model (50) of the internal structure of the test specimen (30, 34, 38); determining whether or not the model (50) satisfies one or more criteria; and, if the model (50) satisfies the criteria, determining that the at least part of the object (2) produced by performing the Additive Manufacturing process is acceptable, or, if the model (50) does not satisfy the criteria, determining that the at least part of the object (2) produced by performing the Additive Manufacturing process is not acceptable.