An x-ray spectrum collected from a sample via excitation of the sample by an electron beam includes artifacts due to interaction volume, surface effects, contamination, or other interferences with the desired collection of representative x-rays from the sample. Inline spectral correlation, summation, averaging, other aggregation, or combinations thereof provides more precise collection of x-ray spectrum from multi-phase, unprepared, particle, or complex samples.

Methods of introducing a small molecule into a crystal of a macromolecule, of obtaining a microcrystal having a macromolecule and a small molecule from a crystal of the macromolecule, of determining a structural model for a complex having a macromolecule and a small molecule, of identifying a small molecule that complexes with a macromolecule, and of screening a library of small molecules for their binding to a macromolecule are disclosed.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

An electron microscope analysis system includes a detector that captures an electron microscope image formed on a detection plane by an electron beam that irradiates a specimen to be observed and transmits through the specimen. Electrons each having a de Broglie wave motion are integrated to be a linear rotor that is a collection of the electrons each having the de Broglie wave motion, so that each electron can be recognized, the principle of conservation of electric charge can be satisfied, and interaction with the specimen can be calculated. The electron is represented as a detection point on the detection plane, for comparison with actual measurement data when the number of electrons is small, to reduce damage of the specimen by the electron beam, and to obtain information of the specimen when an amount of irradiation is small.

An electron microscope analysis system includes a detector that captures an electron microscope image formed on a detection plane by an electron beam that irradiates a specimen to be observed and transmits through the specimen. Electrons each having a de Broglie wave motion are integrated to be a linear rotor that is a collection of the electrons each having the de Broglie wave motion, so that each electron can be recognized, the principle of conservation of electric charge can be satisfied, and interaction with the specimen can be calculated. The electron is represented as a detection point on the detection plane, for comparison with actual measurement data when the number of electrons is small, to reduce damage of the specimen by the electron beam, and to obtain information of the specimen when an amount of irradiation is small.

The present disclosure relates to methods of obtaining electron diffraction data of microcrystalline samples.

The present disclosure relates to methods of obtaining electron diffraction data of microcrystalline samples.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Methods and systems for conducting tomographic imaging microscopy of a sample with a high energy charged particle beam include irradiating a first region of the sample in a first angular position with a high energy charged particle beam and detecting emissions resultant from the charged particle beam irradiating the first region. The sample is repositioned into a second angular position such that the second region to be different than the first region, and a second region of the sample is irradiated. Example repositioning may include one or more of a translation of the sample, a helical rotation of the sample, the sample being positioned in a non-eucentric position, or a combination thereof. Emissions resultant from irradiation of the second region are then detected, and a 3D model of a portion of the sample is generated based at least in part on the detected first emissions and detected second emissions.

The present disclosure discloses an apparatus. The apparatus according to the present disclosure may include a communication interface, one or more memories, and one or more processors. The one or more processors may be configured to: control the thin-film deposition devices to execute the thin-film deposition process by accessing the memory and executing a recipe; obtain in-process thin-film state data of the thin film from the thin-film measurement result received via the communication interface during the thin-film deposition process; and derive post-process thin-film state data of the thin film from the process condition data, the sensing data, and the in-process thin-film state data using a first correlation model.