The present disclosure discloses an apparatus. The apparatus according to the present disclosure may include a communication interface, one or more memories, and one or more processors. The one or more processors may be configured to: control the thin-film deposition devices to execute the thin-film deposition process by accessing the memory and executing a recipe; obtain in-process thin-film state data of the thin film from the thin-film measurement result received via the communication interface during the thin-film deposition process; and derive post-process thin-film state data of the thin film from the process condition data, the sensing data, and the in-process thin-film state data using a first correlation model.

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

The present invention relates to a method for determining the crystal structure of a crystal (4) capable of electron diffraction. The method includes the steps of obtaining a three-dimensional electron diffraction pattern and processing data from the electron diffraction pattern. The essence of the invention is that the method of determination consists in creating virtual diffraction frames containing a list of integrated scattered electron intensities. Subsequently, the dynamical diffraction theory is used in the data processing step. In another embodiment, the invention provides an apparatus capable of performing this method.

The present invention relates to a method for determining the crystal structure of a crystal (4) capable of electron diffraction. The method includes the steps of obtaining a three-dimensional electron diffraction pattern and processing data from the electron diffraction pattern. The essence of the invention is that the method of determination consists in creating virtual diffraction frames containing a list of integrated scattered electron intensities. Subsequently, the dynamical diffraction theory is used in the data processing step. In another embodiment, the invention provides an apparatus capable of performing this method.

Molecular structure of a crystal may be solved based on at least two diffraction tilt series acquired from a sample. The two diffraction tilt series include multiple diffraction patterns of at least one crystal of the sample acquired at different electron doses. In some examples, the two diffraction tilt series are acquired at different magnifications.

Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

Crystallographic information of crystalline sample can be determined from one or more three-dimensional diffraction pattern datasets generated based on diffraction patterns collected from multiple crystals. The crystals for diffraction pattern acquisition may be selected based on a sample image. At a location of each selected crystal, multiple diffraction patterns of the crystal are acquired at different angles of incidence by tilting the electron beam, wherein the sample is not rotated while the electron beam is directed at the selected crystal.

A method for correcting distortion in a coherent electron diffraction imaging (CEDI) image induced by a projection lens makes use of a known secondary material that is imaged together with a sample of interest. Reflections generated from the secondary material are located in the image, and these observed reflections are used to approximate a beam center location. Using a known lattice structure of the secondary material, Friedel pairs are located in the image and unit cell vectors are identified. Predicted positions for each of the secondary material reflections are then determined, and the position differences between the observed reflections and the predicted reflections are used to construct a relocation function applicable to the overall image. The relocation function is then used to adjust the position of image components so as to correct for the distortion.

A method for correcting distortion in a coherent electron diffraction imaging (CEDI) image induced by a projection lens makes use of a known secondary material that is imaged together with a sample of interest. Reflections generated from the secondary material are located in the image, and these observed reflections are used to approximate a beam center location. Using a known lattice structure of the secondary material, Friedel pairs are located in the image and unit cell vectors are identified. Predicted positions for each of the secondary material reflections are then determined, and the position differences between the observed reflections and the predicted reflections are used to construct a relocation function applicable to the overall image. The relocation function is then used to adjust the position of image components so as to correct for the distortion.