A method for in-situ joint nanoscale three-dimensional imaging and chemical analysis of a sample. A single charged particle beam device is used for generating a sequence of two-dimensional nanoscale images of the sample, and for sputtering secondary ions from the sample, which are analysed using a secondary ion mass spectrometry device. The two-dimensional images are combined into a three-dimensional volume representation of the sample, the data of which is combined with the results of the chemical analysis.

Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.

Aspects of the disclosure provide methods for polysilicon characterization. The method includes receiving image data of a polysilicon structure formed on a sample substrate. The image data is in a spatial domain and is generated by transmission electron microscopy (TEM). Further, the method includes extracting frequency spectrum of the image data in a frequency domain. Then, the method includes selecting a subset of the frequency spectrum that corresponds to characteristic of first crystal grains that are of a first orientation, and transforming the selected subset of the frequency spectrum to the spatial domain to construct a first spatial image for the first crystal grains of the first orientation.

An X-ray analyzer includes: a specimen stage; a spectrometer having a spectroscopic element and an X-ray detector; a temperature measuring unit including at least one of a first temperature sensor for measuring a temperature of the specimen stage and a second temperature sensor for measuring a temperature of the spectrometer; a storage unit which stores calibration data of the spectrometer, and a previous measurement result by the temperature measuring unit at the time of execution of the calibration of the spectrometer; and a notifying unit which acquires a measurement result by the temperature measuring unit, calculates a temperature variation amount of the acquired measurement result with respect to the previous measurement result stored in the storage unit, and notifies that calibration is needed, based on the temperature variation amount.

The present invention relates to a method for measuring a sample with a microscope, the method comprising scanning the sample using a focusing plane having a first angle with respect to a top surface of the sample and computing a confidence distance based on the first angle. The method further comprises selecting at least one among a plurality of alignment markers on the sample for performing a lateral alignment of the scanning step and/or for performing a lateral alignment of an output of the scanning step. In particular, the at least one alignment marker selected at the selecting step is chosen among the alignment markers placed within the confidence distance from an intersection of the focusing plane with the top surface.

Systems and methods for interpreting high-energy interactions on a sample are described in this application. In particular, this application describes analysis systems and methods, comprising impinging radiation from a source on an analyte, detecting energy interactions resulting from the impinging radiation using a detector, adjusting a signal emitted from the radiation detector using a pre-processing method to emphasize specific features of that signal, using a machine learning module to interpret specific parts of the adjusted signal, producing a quantitative and/or qualitative model using the machine leaning module, and applying the quantitative and/or qualitative model to a separate energy interaction. The quantitative and qualitative models derived from this training can be applied to new detector inputs from the same or similar instruments. Other embodiments are described.

Systems and methods for interpreting high-energy interactions on a sample are described in this application. In particular, this application describes analysis systems and methods, comprising impinging radiation from a source on an analyte, detecting energy interactions resulting from the impinging radiation using a detector, adjusting a signal emitted from the radiation detector using a pre-processing method to emphasize specific features of that signal, using a machine learning module to interpret specific parts of the adjusted signal, producing a quantitative and/or qualitative model using the machine leaning module, and applying the quantitative and/or qualitative model to a separate energy interaction. The quantitative and qualitative models derived from this training can be applied to new detector inputs from the same or similar instruments. Other embodiments are described.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.

A system for collection information from a sample includes a scan generator having a first communication channel and a second communication channel. The first communication channel provides data communication between the scan generator and one or more sampling location movement devices. The second communication channel provides data communication with one or more signal detectors.