A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

A method for sensing gas by a gas sensing device, the method may include generating, by a semiconductor temperature sensing element that is spaced apart from a gas reactive element and is thermally coupled to the gas reactive element, detection signals that are indicative of a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale; and processing, by a readout circuit of the gas sensing device, the detection signals to provide information about a gas that affected the temperature of the gas reactive element.

A process combustion transmitter is provided. The transmitter includes a process probe extendible into a flow of process combustion exhaust. The process probe has a measurement cell with an operating temperature that is above a flashpoint of process combustion fuel. The process probe includes a heater configured to heat the measurement cell to the operating temperature. Electronic circuitry is coupled to the measurement cell and to the heater. The electronic circuitry is configured to disengage power to the heater once process combustion heat is sufficient to maintain the measurement cell at the operating temperature and thereafter to maintain the heater in a de-energized state.

A gas detection device and a gas detection process monitor an area for a combustible target gas. A detector (10), a compensator (11.1), a sensor array (40, 41) and an analysis unit (9) are arranged in a gas detection device housing. The detector includes an electrically conductive wire with a heating segment (20), electrical insulation around the wire and a catalytic material in the electrical insulation. The compensator extends in a plane and includes an electrical strip conductor (32) with a heating segment and a carrier plate for the strip conductor. The gas detection device applies an electrical voltage to the detector and to the compensator. The detector oxidizes the target gas with the heating segment. The sensor array measures detection variables (U10, U11) for the detector and the compensator. The analysis unit compares the two detection variables to determine if a combustible target gas is present.

A method monitors gases produced in an insulating medium circuit. The insulating medium circuit is in contact with a transition resistor of an on-load tap-changer. The method includes: ascertaining a time profile of a resistor temperature of the transition resistor during a loading time period; and determining at least one characteristic value for characterizing the gases produced based upon the time profile of the resistor temperature.

A method monitors gases produced in an insulating medium circuit. The insulating medium circuit is in contact with a transition resistor of an on-load tap-changer. The method includes: ascertaining a time profile of a resistor temperature of the transition resistor during a loading time period; and determining at least one characteristic value for characterizing the gases produced based upon the time profile of the resistor temperature.

Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.

Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.