A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), I.sub.OFF represents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and C.sub.S is a constant that represents load capacitance of a source or a drain. $\begin{array}{cc}{I}_{\mathrm{OFF}}\left(t\right)=C_S\times \frac{\alpha \times \beta }{{\tau }^{\beta }}\times t^{\beta -1}\times e^{-{\left(\frac{t}{\tau }\right)}^{\beta }}& \left(\mathrm{a2}\right)\end{array}$

A semiconductor device in which a transistor has the characteristic of low off-state current is provided. The transistor comprises an oxide semiconductor layer having a channel region whose channel width is smaller than 70 nm. A temporal change in off-state current of the transistor over time can be represented by Formula (a2). In Formula (a2), I.sub.OFF represents the off-state current, t represents time during which the transistor is off, α and τ are constants, β is a constant that satisfies 0<β≤1, and C.sub.S is a constant that represents load capacitance of a source or a drain. $\begin{array}{cc}{I}_{\mathrm{OFF}}\left(t\right)=C_S\times \frac{\alpha \times \beta }{{\tau }^{\beta }}\times t^{\beta -1}\times e^{-{\left(\frac{t}{\tau }\right)}^{\beta }}& \left(\mathrm{a2}\right)\end{array}$

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

In some implementations, an apparatus for testing an insulated glass unit is provided. The apparatus includes a housing and a port coupled to the housing, where the port is configured to couple with a pigtail of an insulated glass unit. The apparatus includes a battery housed within the housing, where the battery is configured to provide power to an insulated glass unit. The apparatus includes an input interface which is coupled to the housing, where the input interface is configured to receive. The apparatus includes a controller which is housed within the housing and is configured to receive the input from the input interface, send commands to an insulated glass unit, and receive data from the insulated glass unit. The apparatus also includes one or more indicators coupled with the housing, where the one or more indicators are configured to indicate a status of the insulated glass unit.

The current density distribution is determined in an electronic device including a first and a second electrode, and a layer of a 2-dimensional conductive material extending between the first and second electrode. The total current through the electrodes is measured, and then a first current measurement probe is placed at a plurality of positions near the interface between the 2D material and the first electrode. The probe is coupled to the same voltage as the first electrode. The same is done at the interface between the channel and the second electrode, by placing a second probe coupled to the same voltage as the second electrode. The boundary conditions are determined for the current, and assuming that the current density vector is normal to the interfaces, this yields the boundary conditions for the current density vector. Finally, the continuity equation is solved, taking into account the boundary conditions.

The current density distribution is determined in an electronic device including a first and a second electrode, and a layer of a 2-dimensional conductive material extending between the first and second electrode. The total current through the electrodes is measured, and then a first current measurement probe is placed at a plurality of positions near the interface between the 2D material and the first electrode. The probe is coupled to the same voltage as the first electrode. The same is done at the interface between the channel and the second electrode, by placing a second probe coupled to the same voltage as the second electrode. The boundary conditions are determined for the current, and assuming that the current density vector is normal to the interfaces, this yields the boundary conditions for the current density vector. Finally, the continuity equation is solved, taking into account the boundary conditions.

A plurality of magnetic field sensors, for example arranged in an array, is operative to measure changes in magnetic field strength proximate the surface(s) of a test structure. The test structure may approximate the geometry of an airplane fuselage, wing, or the like. An electric current is applied to the test structure, and the magnetic field sensors sense changes in a magnetic field caused by the current. A corresponding plurality of integrators convert the sensor outputs to magnetic field strength values. From the plurality of magnetic field strength values and corresponding sensor locations, a current density over the target surface is inferred.

A plurality of magnetic field sensors, for example arranged in an array, is operative to measure changes in magnetic field strength proximate the surface(s) of a test structure. The test structure may approximate the geometry of an airplane fuselage, wing, or the like. An electric current is applied to the test structure, and the magnetic field sensors sense changes in a magnetic field caused by the current. A corresponding plurality of integrators convert the sensor outputs to magnetic field strength values. From the plurality of magnetic field strength values and corresponding sensor locations, a current density over the target surface is inferred.