A fault analysis method comprises: receiving fault data from wafer level testing that identifies locations and test results of a plurality of die; applying a kernel transform to the fault data to produce cluster data, where the kernel transform defines a fault impact distribution that defines fault contribution from the failed die to local die within an outer radial boundary of the fault impact distribution. Applying the kernel transform comprises: centering the fault impact distribution at a location of each die that failed wafer level testing, associating each local die that falls within the outer radial boundary with a respective fault contribution value according to the fault impact distribution, and accruing fault contribution values associated with each respective die of the plurality of die to produce a cluster value for the respective die, which correlates to a probability of failure of the respective die at a future time.

An apparatus includes logic to determine a discharge drop of a capacitor and to adjust an enablement charge level of the capacitor according to the discharge drop.

A process includes measuring at least one component parameter of a plurality of components with a testing device; and arranging at least a portion of the plurality of components in a sequential order based on the at least one component parameter with an implementation system in at least one of the following: a shipping format and a device implementation of the portion of the plurality of components. A system is disclosed as well.

A current sensor is configured to detect a current flowing through an electrical conductor. The current sensor includes a core and a coil wound around the core. The core has a hollow configure to allow the electrical conductor to pass through the hollow. The core substantially has a C-shape haying a gap connected to the hollow. At least a part of the gap of the core is located inside the coil. This current sensor suppresses the influence of external noise.

In a manufacturing step in which a structure of target of screening is formed on a semiconductor substrate in the middle of manufacturing process before a semiconductor device is finished, screening of potential defects of a gate insulating film is performed for each wafer at one time so that the semiconductor device is caused to appear as an initial defective product when the finished semiconductor device is subjected to an electrical characteristic test. Provided are a semiconductor device, and a method of manufacturing a semiconductor device which enables reliable screening of potential defects in a short period of time.

In a manufacturing step in which a structure of target of screening is formed on a semiconductor substrate in the middle of manufacturing process before a semiconductor device is finished, screening of potential defects of a gate insulating film is performed for each wafer at one time so that the semiconductor device is caused to appear as an initial defective product when the finished semiconductor device is subjected to an electrical characteristic test. Provided are a semiconductor device, and a method of manufacturing a semiconductor device which enables reliable screening of potential defects in a short period of time.

A method for making a light-emitting diode (LED) emitter module includes providing a substrate and providing two or more groups of LED dies disposed on the substrate. Each group has one or more LED dies, and each of the LED dies is coupled to an electrical contact and electrical paths are configured for feeding separate electrical currents to the groups of LED dies. The method also includes determining information associating a plurality output light colors with a corresponding plurality of combinations of electrical currents, each combination specifying a plurality of electrical current values, each electrical current value being associated with an LED die from one of the two or more groups of LED dies. The method also includes storing the information in the memory device, and providing a circuit for accessing the information in a memory device.

An example method includes stressing, under different circuit-stress test conditions, a plurality of different types of regional circuits susceptible to time dependent dielectric breakdown (TDDB), and in response, monitoring for levels of reliability failure associated with the plurality of different types of regional circuits. The method includes storing a set of stress-test data based on each of the levels of reliability failure, the set of stress-test data being stored within the integrated circuit to indicate reliability-threshold test data specific to the integrated circuit. Within the integrated circuit, an on-chip monitoring circuit indicates operational conditions of suspect reliability associated with dielectric breakdown of at least one of the plurality of different types of regional circuits. And, the method further includes, during operation of the integrated circuit, adjusting at least one of the different circuit-stress test conditions based on the indicated operational conditions of suspect reliability.

An example method includes stressing, under different circuit-stress test conditions, a plurality of different types of regional circuits susceptible to time dependent dielectric breakdown (TDDB), and in response, monitoring for levels of reliability failure associated with the plurality of different types of regional circuits. The method includes storing a set of stress-test data based on each of the levels of reliability failure, the set of stress-test data being stored within the integrated circuit to indicate reliability-threshold test data specific to the integrated circuit. Within the integrated circuit, an on-chip monitoring circuit indicates operational conditions of suspect reliability associated with dielectric breakdown of at least one of the plurality of different types of regional circuits. And, the method further includes, during operation of the integrated circuit, adjusting at least one of the different circuit-stress test conditions based on the indicated operational conditions of suspect reliability.

In some examples, a method for manufacturing a solid state device comprises forming a first layer of the solid state device; forming a conductive layer of the solid state device above the first layer, the conductive layer having an access pad formed on an end of the conductive layer; applying a voltage to the conductive layer using the access pad, the voltage forming an electric field in an area of the first layer beneath the conductive layer; and completing manufacture of the solid state device after applying the voltage.