There is provided a semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device. The semiconductor inspection device includes: a sample stage 6 on which a sample is placed; an electron optical system 1 configured to radiate an electron beam to the sample; a measurement probe 3 configured to come into contact with the sample; a measurement device 8 configured to measure an output from the measurement probe; and an information processing device 9 configured to acquire a measurement value of the output from the measurement probe in response to radiation of the electron beam to the sample. The information processing device sets a timing to start the radiation of the electron beam to the sample and a timing to freeze the radiation of the electron beam, a first measurement period in which the measurement device measures the output from the measurement probe in a state where the electron beam is radiated to the sample, and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation of the electron beam is frozen, and obtains the measurement value of the output from the measurement probe in response to the radiation of the electron beam to the sample from a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.

Provided is a semiconductor inspection device capable of high-speed response analysis as defect analysis of a fine-structured device constituting an LSI. Therefore, the semiconductor inspection device includes a vacuum chamber 3, a sample table 4 which is disposed in the vacuum chamber and on which a sample 6 is placed, an electron optical system 1 disposed such that an electron beam is emitted from above the sample, a plurality of probe units 24 connected to external devices 11 and 12 disposed outside the vacuum chamber via a coaxial cable 10, and an electrode 5 provided on or in the vicinity of the sample table. The probe unit 24 includes a measurement probe 8 configured to come into contact with the sample, a GND terminal 9 configured to come into contact with the electrode 5, and a probe holder 7 configured to hold the measurement probe and the GND terminal, connect a signal line of the coaxial cable to the measurement probe, and connect a GND line of the coaxial cable to the GND terminal. When the measurement probe of the probe unit comes into contact with the sample, the GND terminal comes into contact with the electrode.

The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.

Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

The present disclosure relates to a detection system, and, more particularly, to system for detection of passive voltage contrast and methods of use. The system includes a chamber; a stage provided within the chamber, configured to stage a target structure; an electron beam apparatus which is structured to emit an e-beam toward the stage; and a laser source which emits a laser signal toward the stage, at a same area as the e-beam.

The present invention provides a method for calibrating verticality of a particle beam. The method includes: providing a baseplate having a first sensor and a second sensor; emitting the particle beam to the first sensor of the baseplate from an emitter, such that a first datum is collected when the first sensor receives the particle beam; emitting the particle beam to the second sensor of the baseplate from the emitter, such that a second datum is collected when the second sensor receives the particle beam; calculating a first calibrating datum based on the first datum and the second datum; and adjusting the baseplate or the emitter based on the first calibrating datum if the first calibrating datum is out of a first predetermined range.

In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

An inspection method of an embodiment includes: positively charging a substrate on which a pattern is formed by irradiating the substrate with a first electron beam; generating a secondary electron on a surface of the substrate by irradiating the substrate with a second electron beam; detecting the generated secondary electron; and inspecting the pattern based on the detected secondary electron, in which when the substrate is irradiated with the first electron beam, the first electron beam is made incident on the substrate at an incident angle different from an incident angle of the second electron beam with respect to the substrate, while positions of an emission source of the first electron beam and the substrate are being moved relatively.

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.