The invention: determines if the duration of the conducting state of the semiconductors in a first cycle of the pulse width modulation is upper than a predetermined duration, measures, during the conducting state of the semiconductors at a second cycle, the voltage provided to the load, sequentially disables the conduction of each semiconductor during a part of the duration of the conducting state of the semiconductors in a third cycle and measures the voltage provided to the load, determines the differences between the voltage measured during the second cycle and each voltage measured during the third cycle, orders the differences according to their value, checks if the determined order is identical to an order stored in a memory of the device and determines that one connection of one semiconductor is deteriorated if the order is changed.

A testing system includes a subtractor and a divider. The subtractor is configured to receive a first voltage of a circuit being tested and a second voltage of the circuit, and to derive a difference between the first voltage and the second voltage. The divider is configured to receive the difference between the first voltage and the second voltage, and to derive a resistance of the circuit by dividing (i) the difference between the first voltage and the second voltage by (ii) a difference between a first current applied to the circuit and a second current applied to the circuit. The first voltage is corresponding to the first current, and the second voltage is corresponding to the second current.

A bonded structure is disclosed. The bonded structure can include a first semiconductor element having a first front side and a first back side opposite the first front side. The bonded structure can include a second semiconductor element having a second front side and a second back side opposite the second front side, the first front side of the first semiconductor element directly bonded to the second front side of the second semiconductor element along a bond interface without an adhesive. The bonded structure can include security circuitry extending across the bond interface, the security circuitry electrically connected to the first and second semiconductor elements

A bonded structure is disclosed. The bonded structure can include a first semiconductor element having a first front side and a first back side opposite the first front side. The bonded structure can include a second semiconductor element having a second front side and a second back side opposite the second front side, the first front side of the first semiconductor element directly bonded to the second front side of the second semiconductor element along a bond interface without an adhesive. The bonded structure can include security circuitry extending across the bond interface, the security circuitry electrically connected to the first and second semiconductor elements

An apparatus and method for testing a circuit board included in a battery management system. The circuit board includes a first test point connected in common to one end of a first resistor, one end of a first capacitor and one end of a second resistor; a second test point connected in common to the other end of the second resistor and one end of a second capacitor; a third test point connected to the other end of the first resistor; and a fourth test point connected in common to the other end of the first capacitor and the other end of the second capacitor. The apparatus determines an open-circuit fault of at least one of the first capacitor and the second capacitor based on a first diagnosis voltage between the first and fourth test points and a second diagnosis voltage between the second and fourth test points.

Disclosed is a display driving device including a bonding resistance measurement circuit. The display driving device may include: first and second pads bonded to a pad of a display panel through a wire and configured to provide bonding resistance; and a bonding resistance measurement circuit configured to measure the bonding resistance by comparing an input voltage applied to the bonding resistance through the first pad to one or more preset reference voltages.

A semiconductor chip is provided with first and second electrode pads, a first current detector, and a third electrode pad. The first and second electrode pads are both to be wire-bonded to a first lead terminal. The first current detector is connected between the first and second electrode pads. The third electrode pad is wire-bonded to a second lead terminal. A first closed circuit is configured by the first lead terminal, the first electrode pad, the first current detector, and the second electrode pad. An induced current flows through the first closed circuit when a current generating an induced electromotive force is applied to the third electrode pad. The first current detector is configured to output different values depending on whether the induced current exceeds a threshold value or not.

A driving integrated circuit bonded to a mounting area of a display panel, the circuit including a plurality of connection contact pads electrically coupled to a plurality of signal pads in the mounting area, at least one test contact pad electrically coupled to at least one test pad in the mounting area, and a resistance measuring unit configured to charge an external capacitor electrically coupled to a bonding part of the test pad and the test contact pad and to measure a bonding resistance of the bonding part based on a magnitude or a discharging time of a charging voltage of the external capacitor.

A method and a test fixture for evaluating a junction between an electrical lead trace and a busbar are described, and include an electric power supply disposed to supply electric power to the electrical lead trace and an electric monitoring device disposed to monitor electrical potential across the junction. A mechanical stress-inducing device is disposed to apply mechanical stress proximal to the junction. The electric monitoring device monitors the electrical potential across the junction of the electrical lead trace coincident with the mechanical stress-inducing device applying mechanical stress proximal to the junction when the electric power supply is supplying electric power to the electrical lead trace. Electrical integrity of the junction is evaluated based upon the monitored electrical potential across the junction.

Disclosed are an IGBT-module condition monitoring equipment and method. The IGBT-module condition monitoring equipment includes an IGBT module, a gate turning-on voltage overshoot monitoring module, a driving circuit, a bond wire state judging module, and a signal acquisition module. The breakage condition of bond wires is obtained by comparing a monitored actual gate turning-on voltage overshoot with a preset reference gate turning-on voltage overshoot threshold. The present invention solves the problem encountered in monitoring the aging of IGBT bond wires in power electronic converters. By characterizing the bond wire detachment with the gate turning-on voltage overshoot, the slight aging of the detached bond wires can be monitored without disturbing the operation, which is high in resolution and free of invasiveness and enables real-time online monitoring at high sampling rate and low cost, showing great significance in the monitoring of the IGBT and the reliability evaluation of power electronic converters.