A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.

A magneto-sensitive wire for a magnetic sensor with both measurement range expansion and environment resistance performance improvement, includes a Co-based alloy containing more Fe than a reference composition that is amorphous overall and exhibits zero magnetostriction. The Co-based alloy may have an Fe ratio (Fe/(Co+Fe+Ni)) of 6.1% to 9.5%. The Fe ratio is an atomic fraction of the Fe amount with respect to the total amount of a magnetic element group consisting of Co, Fe, and Ni. By heating an amorphous wire of a Co-based alloy at a temperate at least equal to a crystallization start temperature and lower than a crystallization end temperature, allows the magneto-sensitive wire to have a composite structure in which crystal grains are dispersed in the amorphous phase. The magneto-sensitive wire's anisotropy field is, for example, 5 to 70 Oe and the stress sensitivity, indicative of magnetostriction, is −30 to 30 mOe/MPa.

An exemplary wearable sensor unit includes 1) a magnetometer comprising a vapor cell comprising an input window and containing an alkali metal, and a light source configured to output light that passes through the input window and into the vapor cell along a transit path, and 2) a temperature control circuit external to the vapor cell and configured to create a temperature gradient within the vapor cell, the temperature gradient configured to concentrate the alkali metal within the vapor cell away from the transit path of the light.

An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.

The innovative concept described herein relates to a magnetic angle sensor system having a rotatable shaft, a permanent magnet coupled to the rotatable shaft, and a magnetic field sensor arranged opposite the permanent magnet, wherein the magnetic field sensor is configured to detect a magnetic field prevailing in its detection region. The magnetic angle sensor system comprises means for reducing and/or compensating for an inhomogeneous stray field component of a per se homogeneous external magnetic stray field.

A magnetic sensing device includes a non-magnetic layer serving as a spacer and two magnetic layers that sandwich the spacer, and two oxide layers that sandwich the trilayer structure including the two magnetic layers and the spacer.

A structure for magnetic flux sensor conditioning is presented which partitions an input analog signal of unknown integrity into two: susceptible and insusceptible. The structure scrutinizes the susceptible signal partition, in view of additional guard sensor information, through a mixed-signal processing side-chain that employs a non-invasive physical magnetic attack detection algorithm. The side-chain either validates, or replaces with a best estimate, the susceptible signal partition, depending upon the absence or presence of attack, respectively. The structure finally recombines the scrutinized susceptible signal partition with the insusceptible signal partition. The result is an analog magnetic flux sensor signal that is robust against skillful, surreptitious, spoofing attacks. If unmitigated, such attacks may induce catastrophic consequences into systems relying upon the magnetic flux sensor.

Disclosed herein are detection devices, systems, and methods that use magnetic nanoparticles (MNPs) to allow molecules to be identified. Embodiments of this disclosure include magnetic sensors (e.g., magnetoresistive sensors) that can be used to detect temperature-dependent magnetic fields (or changes in magnetic fields) emitted by MNPs, and, specifically to distinguish between the presence and absence of magnetic fields emitted, or not emitted, by MNPs at different temperatures selected to take advantage of knowledge of how the MNPs' magnetic properties change with temperature. Embodiments disclosed herein may be used for nucleic acid sequencing, such as deoxyribonucleic acid (DNA) sequencing.

A magnetoresistive sensor is provided. The magnetoresistive sensor comprises a substrate having a layer structure thereon. The layer structure comprises a lower layer, and an upper layer. The lower layer is provided on the substrate, wherein the lower layer comprises one or more graphene layers which extend across the lower layer. The upper layer is provided on the lower layer and formed of a dielectric material. The lower and upper layers of the layer structure share one or more continuous edge surfaces. The magnetoresistive sensor further comprises a first electrical contact provided adjacent to the layer structure such that the first electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, a second electrical contact provided adjacent to the layer structure such that the second electrical contact is in direct contact with the one or more graphene layers via one of the one or more continuous edge surfaces, and a continuous air-resistant coating layer covering the layer structure.

Methods and apparatus for a sensor including a series of tunneling magnetoresistance (TMR) pillars and a heatsink adjacent to at least one of the TMR pillars, where the heatsink comprises Titanium Nitride (TiN).