An isolating Hall sensor structure having a support structure made of a substrate layer and an oxide layer, a semiconductor region of a first conductivity type which is integrally connected to a top side of the oxide layer, at least one trench extending from the top side of the semiconductor region to the oxide layer of the support structure, at least three first semiconductor contact regions of the first conductivity type, each extending from a top side of the semiconductor region into the semiconductor region. The at least one trench surrounds a box region of the semiconductor region. The first semiconductor contact regions are each arranged in the box region of the semiconductor region and are each spaced apart from one another. A metallic connection contact layer is arranged on each first semiconductor contact region.

A magnetic field sensor of the present invention includes a first electrode including a magnetic material, a second electrode including a non-magnetic material, a common electrode disposed between the first electrode and the second electrode and connected to a ground terminal, a power supplier of which one end is connected to the first electrode and the second electrode and of which another end is connected to the common electrode to supply power of a frequency band required, a variable resistor configured to control at least one of a resistance value between the first electrode and the power supplier or a resistance value between the second electrode and the power supplier, and a differential amplifier connected to the first electrode through a positive terminal and connected to the second electrode through a negative terminal to output a difference value between a first capacitance generated by the first electrode and a second capacitance generated by the second electrode in response to external application of a magnetic field.

Methods for forming an efficient and effective crossed-fins FinFET device for sensing and measuring magnetic fields and resulting devices are disclosed. Embodiments include forming first-fins, parallel to and spaced from each other, in a first direction on a substrate; forming second-fins, parallel to and spaced from each other on the substrate, in a same plane as the first fins and in a second direction perpendicular to and crossing the first-fins; forming a dummy gate with a spacer on each side over channel areas of the first and second fins; forming source/drain (S/D) regions at opposite ends of each first and second fin; forming an ILD over the fins and the dummy gate and planarizing to reveal the dummy gate; removing the dummy gate, forming a cavity; and forming a high-k/metal gate in the cavity.

According to an embodiment of the present disclosure, an integrated circuit includes: at least one sensing element configured to generate a sensed signal responsive to an electrical or magnetic phenomenon; an analog-to-digital converter configured to convert the sensed signal into a digital signal; and a digital processor configured to detect a target frequency of the electrical or magnetic phenomenon by iteratively applying a first real-valued coefficient to samples of the digital signal using real-valued arithmetic.

The purpose of the present invention is to provide a terahertz detector using a field-effect transistor capable of implementing high sensitivity by exhibiting an asymmetric characteristic only with a form of a source/drain and a gate. To this end, the present invention relates to the terahertz detector using a field-effect transistor comprising: a source formed by being doped on a portion of a silicon base; a channel formed so as to encompass the source on a plane; a drain formed outside the channel; a dielectric layer formed on an upper end of the source, the channel and the drain; and a gate located at an upper end of the dielectric layer, wherein when terahertz electromagnetic waves are applied through the gate, the intensity of the electromagnetic waves is detected using a current/voltage outputted from the source and the drain.

A magnetic-field-sensitive MOSFET (MagFET) is described herein. In accordance with one embodiment, the MagFET comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of N contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein N is equal to or greater than three. A gate electrode covers the first well region between the contact regions. The gate electrode is separated from the first well region by an isolation layer and is configured to control a charge carrier density in the first well region between the contact regions dependent on a voltage applied at the gate electrode. The first well region has a center of symmetry and the contact regions are arranged rotationally symmetric with respect to the center of symmetry with a rotational symmetry of order N.

According to an embodiment of the present disclosure, an integrated circuit includes: at least one sensing element configured to generate a sensed signal responsive to an electrical or magnetic phenomenon; an analog-to-digital converter configured to convert the sensed signal into a digital signal; and a digital processor configured to detect a target frequency of the electrical or magnetic phenomenon by iteratively applying a first real-valued coefficient to samples of the digital signal using real-valued arithmetic.

The present invention relates to a spin-qubit quantum magnetometer anti radar system entirely implemented in silicon and with full electrical control. By default, each detection clement of the silicon-based spin-qubit quantum magnetometer and radar system of the invention is built around a Field Effect Transistor (PET) on silicon over insulator with a back-gate as well as two front gates, which can be adjacent to one another along the Drain-Source FET channel or alternatively placed across that same channel and facing each other as corner gates. The silicon-based spin-qubit quantum magnetometer and radar system of the invention is particularly well-suited for any type of extremely-sensitive radar applications but but can also be applied for mineral/mining prospecting, discovery of distant astronomical objects, mine and metal detectors, tomography/MRI (Magnetic Resonance Imaging).

A two-wire electronic circuit can sense a voltage across terminals of a transistor and control an electrical current of the two-wire electronic circuit in accordance with the sensed voltage.

Apparatus (100) and method for testing cell contact of battery cells (102) of a battery module (104), which battery cells are electrically connected in parallel via a contacting system (106, 107). The apparatus includes a sensor positioning system (108) for positioning a sensor device (110) at a plurality of test points (112) of the battery module, which is movable along a longitudinal axis (X), a transverse axis (Y), and a vertical axis (Z), and a current generation circuit (114) for generating a battery cell current (I), which is a discharging current from the battery cell or a charging current into the battery cell. The sensor device includes at least one field sensor (118), which, after the sensor device is positioned at one of the test points, detects a field in the region of the test point, which is generated by the battery cell current generated with the current generation circuit.