An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.

A sensor cross-talk compensation system includes a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; a vertical Hall sensor element disposed in the semiconductor substrate, the vertical Hall sensor element is configured to generate a sensor signal in response to a magnetic field impinging thereon; and an asymmetry detector configured to detect an asymmetric characteristic of the vertical Hall sensor element. The asymmetry detector includes a detector main region that vertically extends into the semiconductor substrate from the first main surface towards the second main surface and is of a conductivity type having a first doping concentration; and at least three detector contacts disposed in the detector main region at the first main surface, the at least three detector contacts are ohmic contacts of the conductivity type having a second doping concentration that is higher than the first doping concentration.

A semiconductor device includes a semiconductor substrate of a first conductivity type, and a vertical Hall element provided on the semiconductor substrate. The vertical Hall element includes an impurity diffusion layer of a second conductivity type and three or more electrodes. The impurity diffusion layer is provided on the semiconductor substrate and has an impurity concentration which increases as a depth increases. The three or more electrodes are provided in a straight line on a surface of the impurity diffusion layer and are composed of an impurity region of the second conductivity type having a higher concentration than the impurity diffusion layer.

A high-temperature three-dimensional Hall sensor with a real-time working temperature monitoring function includes a buffer layer, an epitaxial layer, and a barrier layer sequentially grown on a substrate. A high-density two-dimensional electron gas is induced by polarization charges in a potential well at an interface of heterojunctions of the epitaxial layer. A lower surface of the substrate includes a vertical Hall sensor for sensing a magnetic field parallel to a surface of a device. An upper surface of the barrier layer includes a “cross” horizontal Hall sensor for sensing a magnetic field perpendicular to the surface of the device.

A semiconductor device includes a vertical Hall element provided in a first region of a semiconductor substrate, and having the first to the third electrodes arranged side by side in order along a first straight line; a circuit provided in a second region of the semiconductor substrate different from the first region, and having a heat source; and a second straight line intersecting orthogonally a current path for a Hall element drive current which flows between the first electrode and the third electrode. The second line passes a center of the vertical Hall element, and a center point of a region which reaches the highest temperature in the circuit during an operation of the vertical Hall element lies on the second straight line.

A position sensor device includes position sensor elements for generating analog sense signals. A digitization circuit is provided for a digital signal representative of the input phase based on the analog sense signals and a digital processing unit. An output signal is indicative of the position based on the first output of the processing unit. The processing unit comprises an error signal generator for computing an error signal indicative of a phase difference between the digital signal and a feedback signal. A digital filter filters the error signal to generate the first output. A feedback path provides the feedback signal based on the first output and a filter selector to select a filter to be applied from different filters. At least one input on which a common filter circuit operates is scaled differently for each of the different filters to select different filter bandwidths.

A method of magnetic sensing uses at least two magnetic sensing elements including a first and a second magnetic sensor element. The method includes: a) measuring in a first configuration a combination of the first and second signal obtained from both sensors; b) measuring in a second configuration an individual signal obtained from the first sensor only; c) testing a consistency of the combined signal and the individual signal, or testing a consistency of signals derived therefrom, in order to detect an error. A sensor device is configured for performing this method. A sensor system includes the sensor device and optionally a second processor connected thereto.

An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hall elements have longitudinal axes disposed within five degrees of parallel to an edge of the crystal unit cells, and wherein the second plurality of vertical Hall elements have longitudinal axes disposed between eighty-five and ninety-five degrees relative to the longitudinal axes of the first plurality of vertical Hall elements.

An exemplary embodiment of a sensor system includes a magnet system which is designed to generate a magnetic field. Furthermore, the sensor system includes a first magnetic field sensor which is movable in a first direction relative to the magnet system and has a first distance from the magnet system in a second direction perpendicular to the first direction. The sensor system also includes a second magnetic field sensor which is movable in the first direction relative to the magnet system and has a second distance from the magnet system in the second direction, the second distance being greater than the first distance.

A semiconductor device including a CMOS process-based Hall sensor is provided. The semiconductor device which may include a N-type sensing region which is formed on a semiconductor substrate; P-type contact regions and N-type contact regions which are alternately formed in the N-type sensing region; a plurality of first trenches which are formed in contact with the P-type contact regions and have a first width; and a plurality of second trenches which separate the P-type contact regions and the N-type contact regions and have a second width less than the first width.