A magnetic field angle sensor includes a coil configured to generate a magnetic field that induces an eddy current in a rotatable target, a first magnetic field sensing structure positioned proximate to the coil and configured to detect a reflected magnetic field generated by the eddy current induced in the target, a second magnetic field sensing structure positioned proximate to the coil and configured to detect the reflected magnetic field generated by the eddy current induced in the target, wherein the first and second magnetic field sensing structures are configured to detect quadrature components of the reflected magnetic field, and a processing module configured to process the reflected magnetic field detected by the first and second magnetic field sensing structures for determining an angular position of the target.

A magnetic sensor whose output characteristic is less sensitive to the environmental temperature is provided. Magnetic sensor 1 has free layer 24 whose magnetization direction changes in response to an external magnetic field, pinned layer 22 whose magnetization direction is fixed with respect to the external magnetic field, spacer layer 23 that is located between pinned layer 22 and free layer 24 and that exhibits a magnetoresistance effect, and at least one magnet film 25 that applies a bias magnetic field to free layer 24. The film thickness of the magnet film is 15 nm or more and 50 nm or less. The relationship of 0.7≤T.sub.C_HM/T.sub.C_FL≤1.05 is satisfied, where T.sub.C_HM is Curie temperature of the magnet film, and T.sub.C_FL is Curie temperature of the free layer.

Devices and methods for molecule detection using such devices are disclosed herein. A molecule detection device comprises at least one fluidic channel configured to receive molecules to be detected, a sensor comprising a spin torque oscillator (STO) and encapsulated by a material separating the sensor from the at least one fluidic channel, and detection circuitry coupled to the sensor. At least some of the molecules to be detected are labeled by magnetic nanoparticles (HNPs). A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect a frequency or frequency noise of a radio-frequency (RF) signal generated by the STO in response to presence or absence of at least one MNP coupled to one or more binding sites associated with the sensor.

A cable condition monitoring sensor device includes a TMR magnetic field sensor module, a high-pass filtering module, and a signal-amplifying module which are sequentially connected. The TMR magnetic field sensor module measures a magnetic field change signal of a cable, converts the same into a voltage signal, and outputs the voltage signal to the high-pass filtering module. The high-pass filtering module filters out DC bias of the voltage signal, and transmits the filtered voltage signal to the signal-amplifying module. The signal-amplifying module amplifies the filtered voltage signal to obtain an output voltage signal and outputs the output voltage signal. In the present invention, a common mode current to be measured in the cable is extracted by placing the magnetic shielding ring made of ferromagnetic material outside the cable to filter out a differential mode load current in the cable, and the magnitude of the common mode current is determined.

A snap-on assembly includes a housing that holds an integrated circuit with a sensor. A connector supplies power to the integrated circuit and transmits a signal from the integrated circuit to an electronic circuit. An insert fits into an opening of the housing and secures a conductor in the housing without a mechanical fastener. The sensor measures a magnetic field resulting from a current traveling through the conductor.

According to one embodiment, a sensor includes an element part, and a control circuit part. The element part includes first and second elements. Each of the first and second elements includes a first magnetic element and a first conductive member. The control circuit part includes a first current circuit, a differential circuit, and a phase detection circuit. The first current circuit is configured to supply a first current to the first conductive member. The differential circuit is configured to output a differential signal corresponding to a difference of a first signal and a second signal. The first signal corresponds to a change in a first electrical resistance of the first magnetic element of the first element, The second signal corresponds to a change in a second electrical resistance of the first magnetic element of the second element. The phase detection circuit is configured to perform a phase detection of the differential signal.

A method of detecting a biological sample includes the following steps. A magnetic sensor chip is provided, wherein the magnetic sensor chip includes a substrate and a magnetic sensing layer located on the substrate. Probes are connected to the magnetic sensor chip. A sample solution containing biological samples labeled with a first marker is provided on the magnetic sensor chip, so that the biological samples labeled with the first marker are hybridized with the probes. Magnetic beads labeled with a second marker are provided on the magnetic sensor chip, so that the magnetic beads labeled with the second marker are bound onto the biological samples labeled with the first marker. A signal sensed by the magnetic sensing layer is detected by a magnetic sensor.

The present disclosure relates to integrated circuits, and more particularly, to a highly sensitive tunnel magnetoresistance sensor (TMR) with a Wheatstone bridge for field/position detection in integrated circuits and methods of manufacture and operation. In particular, the present disclosure relates to a structure including: a first magnetic tunneling junction (MTJ) structure on a first device level; and a second magnetic tunneling junction (MTJ) structure on a different device level than the first MTJ structure. The second MTJ structure includes properties different than the first MTJ structure.

A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.

The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.