Devices and methods for molecule detection using such devices are disclosed herein. A molecule detection device comprises at least one fluidic channel configured to receive molecules to be detected, a sensor comprising a spin torque oscillator (STO) and encapsulated by a material separating the sensor from the at least one fluidic channel, and detection circuitry coupled to the sensor. At least some of the molecules to be detected are labeled by magnetic nanoparticles (HNPs). A surface of the material provides binding sites for the molecules to be detected. The detection circuitry is configured to detect a frequency or frequency noise of a radio-frequency (RF) signal generated by the STO in response to presence or absence of at least one MNP coupled to one or more binding sites associated with the sensor.

A machine learning system and method. The machine learning system includes at least one computation circuit that performs a weighted summation of incoming signals and provides a resulting signal. The weighted summation is carried out at least in part by a magnetic element in which weights are adjusted based on changes in effective magnetic susceptibility of the magnetic element.

A chirality detector of the present invention for detecting chirality of chiral material, includes: a first electrode and a second electrode that are configured to apply a voltage to a subject containing the chiral material; a spin detection layer configured to be in contact with the subject; a power supply; and a control section. The power supply and the control section are configured to generate an electric field at the subject by applying the voltage between the first electrode and the second electrode. The control section is configured to detect a voltage generated in the spin detection layer in a direction that goes across a direction of the electric field or a voltage generated between the spin detection layer and the subject, and also is configured to detect chirality of the chiral material on the basis of the detected voltage.

In an embodiment, a device includes: a magnetoresistive random access memory cell including: a bottom electrode; a reference layer over the bottom electrode; a tunnel barrier layer over the reference layer, the tunnel barrier layer including a first composition of magnesium and oxygen; a free layer over the tunnel barrier layer, the free layer having a lesser coercivity than the reference layer; a cap layer over the free layer, the cap layer including a second composition of magnesium and oxygen, the second composition of magnesium and oxygen having a greater atomic concentration of oxygen and a lesser atomic concentration of magnesium than the first composition of magnesium and oxygen; and a top electrode over the cap layer.

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04 ×α.

A method is provided for sensing a magnetic field in a magnetic gradiometer of the kind in which pump light and light constituting an optical carrier traverse first and second atomic vapor cells that contain host atoms and that are separated from each other by a known distance. According to such method, the host atoms are prepared in a coherent superposition of two quantum states that differ in energy by an amount that is sensitive to an ambient magnetic field. Modulation of the optical carrier in the respective cells gives rise to sidebands that interfere to generate a beat frequency indicative of the magnetic field gradient. The host atoms are prepared at least in a mode that allows measurement of ambient magnetic field components perpendicular to the axis of the pump light. In such mode, the host atoms are spin-polarized by pump light while subjected to a controlled magnetic field directed parallel to the pump beam, and then the controlled magnetic field is adiabatically extinguished.

A sensing probe may be formed of a diamond material comprising one or more spin defects that are configured to emit fluorescent light and are located no more than 50 nm from a sensing surface of the sensing probe. The sensing probe may include an optical outcoupling structure formed by the diamond material and configured to optically guide the fluorescent light toward an output end of the optical outcoupling structure. An optical detector may detect the fluorescent light that is emitted from the spin defects and that exits through the output end of the optical outcoupling structure after being optically guided therethrough. A mounting system may hold the sensing probe and control a distance between the sensing surface of the sensing probe and a surface of a sample while permitting relative motion between the sensing surface and the sample surface.

A light detection element includes: a plurality of magnetic elements, wherein each of the magnetic elements includes a first ferromagnetic layer that is irradiated with light and a second ferromagnetic layer and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, and wherein at least two of the magnetic elements are arranged to be inside a spot of the light applied to the first ferromagnetic layers of the at least two of the magnetic elements.

Apparatus and method for dynamically adjusting a quantum computer clock frequency. For example, one embodiment of an apparatus comprises: a quantum execution unit to execute quantum operations specified by a quantum runtime; a qubit drive controller to translate the quantum operations into physical pulses directed to qubits on a quantum chip at a first cycle frequency; a spin echo sequencer to issue spin echo command sequences to cause the qubit drive controller to generate a sequence of spin echo pulses at the first cycle frequency; and qubit measurement circuitry to measure the qubits and to store qubit timing data for each qubit, the qubit timing data indicating a coherence time or an amount of computational time available for each qubit to perform quantum operations.

A magnetoresistive effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein the non-magnetic layer includes a first layer and a second layer, and wherein a lattice constant α of the first layer and a lattice constant β of the second layer satisfy a relationship of β−0.04×α≤2×α≤β+0.04×α.