Patent classifications
G01R33/14
HYSTERESIS EFFECT-BASED FIELD FREE POINT-MAGNETIC PARTICLE IMAGING METHOD
A hysteresis effect-based Field Free Point-Magnetic Particle Imaging (FFP-MPI) method includes the following steps: acquiring a hysteresis loop model of Superparamagnetic Iron Oxide Nanoparticles (SPIOs); calculating to obtain a Point Spread Function (PSF) of the SPIOs on the basis of a sinusoidal excitation magnetic field and the hysteresis loop model of the SPIOs; acquiring an original reconstructed image of FFP-MPI on the basis an FFP moving track and a voltage signal; performing deconvolution on the original image with respect to the PSF considering an hysteresis effect, so as to obtain a final reconstructed image; the artifacts and phase errors of image reconstruction caused by the hysteresis effect of the SPIOs with large particle sizes are reduced, the deficiency in reconstruction by the traditional reconstruction method that ignores the hysteresis effect is overcome, the reconstruction speed and the resolution are greatly improved, and the application range of the SPIOs is expanded.
METHOD FOR CHARACTERIZING MAGNETIC DEVICE
The present disclosure provides a method for characterizing magnetic properties of a target layer, including providing a first sample having a first structure, providing a second sample having a target layer over the first structure, obtaining a first magnetic property of the first sample, obtaining a second magnetic property of the second sample, and deriving a third magnetic property of the target layer according to the first magnetic property and the second magnetic property.
Exchange-coupled film and magnetoresistive element and magnetic sensing device including the same
An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.
MAGNETORESISTIVE STACK WITHOUT RADIATED FIELD, SENSOR AND MAGNETIC MAPPING SYSTEM COMPRISING SUCH A STACK
A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.
MEASUREMENT METHOD FOR B-H CURVE OF MAGNETIC MATERIAL BASED ON MAGNETIC-INDUCTANCE
The present invention discloses a measurement method for a B-H curve of magnetic material based on a magnetic-inductance principle, and relates to the field of electric engineering. A measurement apparatus includes an Epstein frame, an alternating power supply, a power analyzer, and an oscilloscope. The core content of the present invention is to perform electromagnetic coupling modeling on an Epstein frame based on a vector model of a magnetic circuit, where an iron core of the Epstein frame is formed by laminating a silicon steel sheet to be measured, and an excitation coil and a detection coil with the same turns number are wound around the iron core. The measurement process is to first obtain a reference B-H curve that only considers a nonlinear reluctance of the iron core, and then to derive a B-H curve considering an eddy current effect in a magnetic field at any frequency from the reference B-H curve. The present invention provides a measurement and simulation method for deriving a B-H curve at any frequency by only measuring a B-H curve at a certain frequency. The method, applicable to a measurement for B-H curves at middle and high frequencies, may obtain much higher accuracy.
Multi-wire electrical parameter measurements via test patterns
A measurement task is selected, where the measurement task is associated with a transmission of an encoded signal transmitted via a plurality of data lines. The encoded signal is encoded using one or more of 3-Phase, N-Phase, or N-factorial low-voltage differential signaling (LVDS) where N is at least three (3). A repeating waveform is generated corresponding to the measurement task. The repeating waveform corresponding to the measurement task is then transmitted via the plurality of data lines.
System for exciting iron core in electric device, method for exciting iron core in electric device, program, and modulation operation-setting device for inverter power supply
The iron loss of an iron core excited by an inverter power supply is reduced. A modulation operation-setting device 1430 for the inverter power supply controls a maximum value Hmax and a minimum value Hmin of a field intensity H in at least one minor loop such that the loss (iron loss, copper loss, and switching loss) of the entire system is less than the loss of the entire system when an electric device is operated with a target waveform (excluding harmonics).
Electromechanical sensor and a method of sensing an object or a tactile input using the sensor
An electromechanical sensor and a method of sensing an object or a tactile input using the sensor. The sensor includes: a base provided with a magnetic sensor arranged to detect a change in magnetic flux at the position of the magnetic sensor; a flexible film adjacent to the magnetic sensor; and a magnetic element provided on the flexible film; wherein the magnetic element is arranged to move relative to the magnetic sensor when the flexible film is reversibly deformed by an external force applied to the flexible film.
MEASUREMENT APPARATUS, MEASUREMENT METHOD, AND COMPUTER-READABLE RECORDING MEDIUM STORING MEASUREMENT PROGRAM
A measurement apparatus acquires actually-measured closed magnetic path curve data, actually-measured open magnetic path curve data, and a surface magnetic property value; calculates, for each divided region obtained by sectioning and dividing the permanent magnet, by using a function including a parameter that determines distribution of magnetic property of the permanent magnet, a magnetic property value of the divided region based on an internal magnetic property value extracted from the actually-measured closed magnetic path curve data and the surface magnetic property value; calculates estimated open magnetic path curve data indicating a magnetization curve of the permanent magnet, based on a magnetic property value and the actually-measured closed magnetic path curve data; changes a value of the parameter to minimize a magnetization difference between the actually-measured open magnetic path curve data and the estimated open magnetic path curve data; and outputs a magnetic property value of each of the divided regions.
EXCHANGE-COUPLED FILM AND MAGNETORESISTIVE ELEMENT AND MAGNETIC SENSING DEVICE INCLUDING THE SAME
An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.