A machine learning system and method. The machine learning system includes at least one computation circuit that performs a weighted summation of incoming signals and provides a resulting signal. The weighted summation is carried out at least in part by a magnetic element in which weights are adjusted based on changes in effective magnetic susceptibility of the magnetic element.

A machine learning system and method. The machine learning system includes at least one computation circuit that performs a weighted summation of incoming signals and provides a resulting signal. The weighted summation is carried out at least in part by a magnetic element in which weights are adjusted based on changes in effective magnetic susceptibility of the magnetic element.

An external field response distribution visualization device includes: an induction circuit that induces a first field component from each of induction positions; a sensor that senses a field strength at sensing positions for each of the induction positions; and an information processing circuit that generates an image showing an external field response distribution. The information processing circuit: calculates, using the sensing result as a boundary condition, an induction position dependent field function that takes an induction and sensing positions as inputs and outputs the field strength; calculates an imaging function that takes an imaging target position as an input and outputs an image intensity, and is defined based on the strength output from the induction position dependent field function in response to inputting the imaging target position; and generates the image based on the imaging function.

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

A magnetoresistive stack includes a reference layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a first coupling intensity, a free layer having a coercivity of less than 10 microTesla, the free layer including a magnetic layer, an antiferromagnetic layer in exchange coupling with the magnetic layer, a magnetic layer substantially of the same magnetisation as the magnetic layer, a spacer layer between the magnetic layers with a thickness for enabling an antiferromagnetic coupling between the magnetic layers of a second coupling intensity lower than the first coupling intensity, a third spacer layer separating the reference and free layers.

A probe (303; 403) for sensing a magnetic marker, comprising a first set of coils (313; 413), which comprises a first coil of a first coil type, e.g. a sense coil (305; 405), disposed between a first pair of coils of second coil type, e.g. drive coils (301a, 301b; 401a, 401b), that are connected in series, and a balancing element (317; 417) which is axially separated from the first set of coils (313; 413) along a length of the probe (303; 403). The balancing element (317; 417) is configured and arranged to generate a sense voltage that wholly offsets, partially offsets, or minimises, a sense voltage induced in the sense coil or coils (305; 405) of the first set of coils from the drive coils or coil (301a, 301b; 401a, 401b). Also disclosed is a detection system comprising a probe (303; 403), a magnetic field generator arranged to drive an alternating magnetic field through the drive coils (301a, 301b; 401a, 401b) of the first set of coils and the balancing element (317; 417), and at least one detector arranged to receive a signal indicative of a sense voltage.

A method of examination of an object comprising the steps of: applying a Nuclear Magnetic Resonance technique to obtain a data item correlated to the relative nuclear susceptibility within the sample; obtaining a further data item correlated to another measure of the object under examination; determining therefrom a ratio.

A method of examination of an object comprising the steps of: applying a Nuclear Magnetic Resonance technique to obtain a data item correlated to the relative nuclear susceptibility within the sample; obtaining a further data item correlated to another measure of the object under examination; determining therefrom a ratio.

A static magnetic field generator generates a non-magnetic field region. An AC magnetic field application instrument applies an AC magnetic field to the non-magnetic field region. A detection coil has an axis parallel to a direction of the AC magnetic field in order to detect a magnetization signal. A measuring instrument is connected to the detection coil. A resonance frequency variable device includes a capacitor connected in parallel to the detection coil in order to adjust a resonance frequency of the detection coil and the measuring instrument. A capacity of the capacitor is adjusted such that a resonance frequency of a closed circuit including the detection coil, the measuring instrument, and the resonance frequency variable device including the capacitor coincides with a frequency of a harmonic signal.

A method of diagnosing internal characteristics of a device includes applying a strong magnetic field to the device. The method can include reducing the strong magnetic field at a location of one or more sensors. At least one of the one or more sensors is proximate to the device. The method can include measuring induced magnetic fields around the device. The method can include measuring induced or intrinsic electrical current flow. The method can include measuring intrinsic magnetic properties. The induced magnetic fields can include diagnostic information on properties of the device and how the properties change over time. The device may be, for example, a battery, a capacitor, a supercapacitor, or a fuel cell. The presented measurement of magnetic susceptibility can be performed on materials, solutions, chemical substances, or tissue samples.