Patent classifications
G02B2006/12059
Silicon-based lithium niobate film electro-optic modulator array and integration method thereof
Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.
SILICON-BASED LITHIUM NIOBATE FILM ELECTRO-OPTIC MODULATOR ARRAY AND INTEGRATION METHOD THEREOF
Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.
Evanescent light generation element and evanescent light generation device
An evanescent light generation element for oscillating evanescent light from an optical waveguide to a clad layer, including a 0.1 ?m-10 ?m thin layer composed of a ferroelectric single crystal or oriented crystal having first and second principal surfaces, and incident side end and exit side end surfaces. A ridge optical waveguide is formed in the thin layer and extends between the incident and exit side end surfaces of the thin layer. At least a pair of grooves is formed on both sides of the ridge optical waveguide in the thin layer and opened at the first principal surface of the thin layer. A clad layer is provided on the first principal surface or the second principal surface. A width of the ridge optical waveguide at the exit side end surface is less than a width of the ridge optical waveguide at the incident side end surface.