A system comprises a first optical component comprising a component body; at least a first waveguide formed in the component body, wherein the first waveguide is substantially mirror-symmetrical in shape relative to a line at or near the center of the first waveguide; and a self-alignment feature configured to assist in optically-coupling the first waveguide with a second waveguide located outside of the component body.

In a waveguide having a given Δ, a low-loss waveguide bend is realized while the curvature radius is kept small. In an optical waveguide in which a first waveguide and a second waveguide are connected, a clothoid tapered waveguide bend is inserted between the first waveguide and the second waveguide. In the clothoid tapered waveguide bend, the waveguide width continuously changes from a first waveguide width at a connection point of the first waveguide to a second waveguide width at a connection point of the second waveguide, the curvature radius continuously changes from a first curvature radius at the connection point of the first waveguide to a second curvature radius at the connection point of the second waveguide, the first waveguide width and the second waveguide width are different from each other, and the first curvature radius and the second curvature radius are different from each other.

In at least one embodiment, the optoelectronic semiconductor device comprises a carrier, a first semiconductor laser configured to emit a first laser radiation and applied on the carrier, and a multi-mode waveguide configured to guide the first laser radiation and also applied on the carrier, wherein the multi-mode waveguide comprises at least one furcation and a plurality of branches connected by the at least one furcation.

A bent taper is provided that includes one or more waveguide bends, at least one of which has a tapering waveguide width along at least a portion thereof. In one embodiment, the bent taper is an S-shaped bent taper that is configured as a TE0-TE1 mode convertor. Such a bent taper can be combined with a linear bi-layer taper configured as a TM0-TE1 mode converter to form a TM0-TE0 polarization rotator.

Structures for an optical power splitter and methods of forming a structure for an optical power splitter. A first waveguide core provides an input port, and second and third waveguide cores provide respective output ports. A non-linear waveguide taper is coupled to the first waveguide core at a first interface and is coupled to the second and third waveguide cores at a second interface. The non-linear waveguide taper includes a first curved section having a first width dimension that increases with increasing longitudinal distance from the first interface. The non-linear waveguide taper includes a second curved section having a second width dimension that increases with increasing longitudinal distance from the second interface. The first and second curved sections join at a longitudinal location at which the first and second width dimensions are each equal to a maximum width of the non-linear waveguide taper.

An optical fiber includes: a core; and a clad which is formed so as to surround an outer circumference of the core concentrically with the core, the clad having at least an inner cladding layer adjacent to the outer circumference of the core and an outer cladding layer formed on an outer circumference of the inner cladding layer, wherein a refractive index of the outer cladding layer is Δ3, and an outer circumference radius of the outer cladding layer is r3, a relationship of Δ1max>Δ3>Δ2min is satisfied, a relationship of Δ3−Δ2min≦0.08% is satisfied, a relationship of r1<r2<r3 is satisfied, a relationship of 0.35≦r1/r2≦0.55 is satisfied, a cable cut-off wavelength is less than or equal to 1260 nm, and an MFD at a wavelength of 1310 nm is 8.6 μm to 9.2 μm.

A multi-mode interferometric optical waveguide device includes: a multi-mode interferometric optical waveguide which includes a first reflective surface; a first single-mode waveguide connected to the multi-mode interferometric optical waveguide; and a second single-mode waveguide connected to the multi-mode interferometric optical waveguide and oppose the first reflective surface. Consequently, the multi-mode interferometric optical waveguide device can propagate light from the first single-mode waveguide to the second single-mode waveguide, with further reduced optical losses.

An apparatus for an attenuation adjustment tool, the attenuation adjustment tool includes a body with an adjustment arm positioned at a first side of the body, where an actuator is configured to extend and retract the adjustment arm. The attenuation adjustment tool further includes an input port and an output port positioned at the first side of the body, wherein an input prong and an output prong of a wrap plug are each respectively insertable into the input port and the output port. The attenuation adjustment tool further includes the adjustment arm configurable to engage with a mechanism on the wrap plug, wherein the mechanism is configurable to alter a shape of a signal cable in the wrap plug.

Embodiments of the disclosure provide a photonic integrated circuit (PIC) structure with a passage for a waveguide through a barrier structure. The PIC structure includes a barrier structure on a substrate, having a first sidewall and a second sidewall opposite the first sidewall. A passage is within the barrier structure, and extends from a first end at the first sidewall of the barrier structure to a second end at the second sidewall of the barrier structure. A shape of the passage includes a reversal segment between the first end and the second end. A waveguide within the passage and extends from the first end to the second end of the barrier structure.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the first level includes crystalline silicon; and an oxide layer disposed between the first level and the second level, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.