Provided is a photoelectric detector, comprising: a silicon layer (110), the silicon layer (110) comprising a first-doping-type doped region (111); a germanium layer (120) in contact with the silicon layer (110), the germanium layer (120) comprising a second-doping-type doped region (121); and a silicon nitride waveguide (130), the silicon nitride waveguide (130) being arranged surrounding the germanium layer (120) along the extension directions of at least three side walls of the germanium layer (120), wherein the silicon nitride waveguide (130) is used for transmitting an optical signal and coupling the optical signal to the germanium layer (120), and the germanium layer (120) is used for detecting the optical signal and converting the optical signal into an electrical signal.

A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Examples described herein relate to an optical device, such as, a ring resonator, that includes a ring waveguide. The ring resonator includes a ring waveguide to allow passage of light therethrough. Further, the ring resonator includes a modulator formed along a first section of the circumference of the ring waveguide to modulate the light inside the ring waveguide based on an application of a first reverse bias voltage to the modulator. Moreover, the ring resonator includes an avalanche photodiode (APD) isolated from the modulator and formed along a second section of the circumference of the ring waveguide to detect the intensity of the light inside the ring waveguide based on an application of a second reverse bias voltage to the APD. The second section is shorter than the first section, and the second reverse bias voltage is higher than the first reverse bias voltage.

A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

Provided are a single-photon source device and a single-photon source system including same. The single-photon source device includes a substrate, a straight waveguide extending in a first direction on the substrate, a first coupling layer which is provided on the straight waveguide and has a first point defect, at least one first electrode which is adjacent to the first point defect and provided on the first coupling layer, a ring waveguide which is adjacent to the straight waveguide and provided on the substrate, and at least one second electrode provided on the ring waveguide.

A large single-photon avalanche diode (SPAD) array is integrated with optical waveguide (WG) based devices. SPAD is a very sensitive optical detector fabricated on a semiconductor chip and WG structures are also built into the same chip. WG structures are configured to accumulate SPAD detection current. Together, they form an ultra-sensitive optical detector with high-speed response and a large aperture.

An optical waveguide type photodetector includes a first semiconductor layer of a first conductive type, a multiplication layer of a first conductive type on the first semiconductor layer, an optical waveguide structure, and a photodiode structure. The photodiode structure has a third semiconductor layer of a second conductive type, an optical absorption layer of an intrinsic conductive type or of a second conductive type, and a second semiconductor layer of a second conductive type. The optical waveguide structure includes an optical waveguiding core layer and a cladding layer. An end face of the photodiode structure located in a second region of the first semiconductor layer and an end face of the optical waveguide structure located in a first region of the first semiconductor layer are in contact.

A light detection and ranging system can employ a metal insulator metal tunnel junction positioned atop a substrate. Activation of the metal insulator metal tunnel junction by a signal from a controller can generate light via inelastic scattering. Light to be used to detect downrange targets can be combined from multiple junctions via a multimode interference combiner.

Light detection devices and related methods are provided. The devices may comprise a reaction structure for containing a reaction solution with a relatively high or low pH and a plurality of reaction sites that generate light emissions. The devices may comprise a device base comprising a plurality of light sensors, device circuitry coupled to the light sensors, and a plurality of light guides that block excitation light but permit the light emissions to pass to a light sensor. The device base may also include a shield layer extending about each light guide between each light guide and the device circuitry, and a protection layer that is chemically inert with respect to the reaction solution extending about each light guide between each light guide and the shield layer. The protection layer prevents reaction solution that passes through the reaction structure and the light guide from interacting with the device circuitry.

Optical beam forming at the inputs/outputs of a photonic chip and to the spectral broadening of the light coupled to the chip. The photonic chip comprises an optical waveguide layer supported on a substrate. The chip includes an optical waveguide structure made of silicon and a coupling surface grating. The photonic chip has a front face on the side facing the coupling surface grating and a rear face on the side facing the substrate. A reflecting collimation structure is integrated in the rear face to modify the mode size of an incident light beam. The coupling surface grating is designed to receive light from the optical waveguide structure and to form a light beam directed to the reflecting collimation structure. The invention further relates to the method for producing such a chip.