Patent classifications
G02B6/4275
SEMICONDUCTOR PHOTODIODE
A semiconductor photodiode. The semiconductor photodiode including: an input waveguide, arranged to receive an optical signal at a first port and provide the optical signal from the second port; a photodiode waveguide, arranged to receive the optical signal from the second port of the input waveguide, and at least partially convert the optical signal into an electrical signal; and an electro-static defence component, located adjacent to the photodiode waveguide. The electro-static defence component and the photodiode waveguide are electrically connected in parallel.
Signal converter
The present disclosure provides a signal convertor, which includes a circuit board, a plurality of isolation transformers, a capacitor, a signal-converting module, an electrical connection interface and a plugging interface. The isolation transformers, the capacitor, the signal-converting module are disposed on the circuit board. The signal-converting module is for converting a plugging signal received from the plugging interface into an electrical signal and transferring the electrical signal to the isolation transformers, or for converting the electrical signal received from the isolation transformers into the plugging signal and transferring the plugging signal to the plugging interface.
Integrated photo detector, method of making the same
An integrated photo detector with enhanced electrostatic discharge damage (ESD) protection. The integrated photo detector includes a first photodiode formed in the SOI substrate and associated with a first p-electrode and a first n-electrode. Additionally, the integrated photo detector includes a second photodiode formed in the SOI substrate associated with a second p-electrode and a second n-electrode forming a capacitance no larger than a few femto Faradays. Moreover, the integrated photo detector includes a first electrode and a second electrode disposed respectively on the SOI substrate. The first/second electrode is respectively connected to the first p/n-electrode via a first/second metallic layer patterned with a reduced width from the first/second electrode to the first p/n-electrode and connected to the second p/n-electrode via a first/second metallic wire to make a parallel coupling between the first photodiode and the second photodiode with an ESD threshold of about 100V.
SIGNAL CONVERTER
The present disclosure provides a signal convertor, which includes a circuit board, a plurality of isolation transformers, a capacitor, a signal-converting module, an electrical connection interface and a plugging interface. The isolation transformers, the capacitor, the signal-converting module are disposed on the circuit board. The signal-converting module is for converting a plugging signal received from the plugging interface into an electrical signal and transferring the electrical signal to the isolation transformers, or for converting the electrical signal received from the isolation transformers into the plugging signal and transferring the plugging signal to the plugging interface.
BACKLIGHT MODULE AND DISPLAY DEVICE
A backlight module and a display device are provided. The backlight module includes a reflector, a light guide plate, and a frame disposed around the light guide plate. The backlight module further includes at least one electrically conductive film.
Display panel, display device, and method for manufacturing display panel
Provided are: a display panel whereby a frame can be narrowed, while ensuring conduction between substrates; a display device; and a method for manufacturing the display panel. The display panel is provided with: a first substrate having a surface, on which an electrode layer is formed; a second substrate having a surface, on which a wiring path for supplying the electrode layer with signals is formed; and a sealing section that defines a space sealed between the first substrate surface and the second substrate surface, which are facing each other. The display panel is also provided with a columnar section that electrically connects the electrode layer to the wiring path. The columnar section is formed at a position in contact with the sealing section.
Silicon photonic integrated circuit with electrostatic discharge protection
Various embodiments of a photonic integrated circuit (PIC) are described herein. A PIC, functioning as a coherent receiver, may include optical components such as an optical coupler, a directional coupler, a beam splitter, a polarizing beam rotator-splitter, a variable optical attenuator, a monitor photodiode, 90-degree hybrid mixer, and a waveguide photodiode. The PIC may also include electrical components such as an electrode, a capacitor, a resistor and a Zener diode.
Optical integrated circuit systems, devices, and methods of fabrication
An optical integrated circuit device includes a semiconductor substrate and a first waveguide made of a first material and disposed over the semiconductor substrate. The first waveguide includes a parallel region and a tapered region. The optical integrated circuit device further includes a first cladding structure disposed over and surrounding the parallel region of the first waveguide, a first extension made of the first material and disposed over the semiconductor substrate, and an electrostatic discharge (ESD) protection structure electrically coupled to the first extension. The first extension physically contacts the parallel region of the first waveguide. The first extension includes a first portion within the first cladding structure and a second portion outside the first cladding structure.
Silicon Photonic Integrated Circuit With Electrostatic Discharge Protection
Various embodiments of a photonic integrated circuit (PIC) are described herein. A PIC, functioning as a coherent receiver, may include optical components such as an optical coupler, a directional coupler, a beam splitter, a polarizing beam rotator-splitter, a variable optical attenuator, a monitor photodiode, 90-degree hybrid mixer, and a waveguide photodiode. The PIC may also include electrical components such as an electrode, a capacitor, a resistor and a Zener diode.
Silicon photonic integrated circuit with electrostatic discharge protection mechanism for static electric shocks
Various embodiments of a photonic integrated circuit (PIC) are described herein. A PIC, functioning as a coherent receiver, may include optical components such as an optical coupler, a directional coupler, a beam splitter, a polarizing beam rotator-splitter, a variable optical attenuator, a monitor photodiode, 90-degree hybrid mixer, and a waveguide photodiode. The PIC may also include electrical components such as an electrode, a capacitor, a resistor and a Zener diode.