A device including a phosphor layer having a plurality of holes or pockets arranged within the phosphor layer to reduce lateral light transmission. The phosphor layer can be sized and positioned to extend over a plurality of LED emitter pixels.

A method for fabricating a buried heterostructure semiconductor optical amplifier is provided. The method includes a step providing a patterned dielectric layer on a substrate, the patterned dielectric layer having openings to expose uncovered regions of the substrate. The method also includes, in a single metal organic chemical vapour deposition (MOCVD) run: etching the uncovered regions of the substrate to form angles at corresponding edges thereof and diffusing a p-dopant in the substrate to obtain a p-dopant distribution in a portion of the substrate; etching a portion of the p-dopant thereby defining a recess in the substrate and growing a n-blocking layer in the recess; sequentially growing, over a portion of the n-blocking layer, an active region, a p-overclad, a p-contact, and a p-metal contact; and growing a n-metal contact on a backside of the substrate. The single MOCVD run combines selective area growth, p-dopant diffusion and etching techniques.

An integrated circuit assembly includes a support (e.g., package substrate or circuit board) and a semiconductor die including a device. The semiconductor die is mounted to the support with the device facing the support. The device can be, for example, a quantum well laser device or a photonics device. A layer of decoupling material is on the device. An underfill material is between the semiconductor die and the support, where the decoupling material is between the device and the underfill material. The decoupling layer decouples stress from transferring from the underfill material into the device. For example, the decoupling material forms only weak bonds with the underfill material and/or a passivation layer on the device, in an embodiment. Weak bonds include non-covalent bonds and non-ionic bonds, for example. The decoupling material can be, for instance, a PTFE film, a poly(p-xylylene) film, a fluorocarbon, or a compound lacking free hydroxyl groups.

An integrated circuit assembly includes a support (e.g., package substrate or circuit board) and a semiconductor die including a device. The semiconductor die is mounted to the support with the device facing the support. The device can be, for example, a quantum well laser device or a photonics device. A layer of decoupling material is on the device. An underfill material is between the semiconductor die and the support, where the decoupling material is between the device and the underfill material. The decoupling layer decouples stress from transferring from the underfill material into the device. For example, the decoupling material forms only weak bonds with the underfill material and/or a passivation layer on the device, in an embodiment. Weak bonds include non-covalent bonds and non-ionic bonds, for example. The decoupling material can be, for instance, a PTFE film, a poly(p-xylylene) film, a fluorocarbon, or a compound lacking free hydroxyl groups.

In a system for converting digital data into a modulated optical signal, an electrically controllable device, including a modulator having one or more actuating electrodes, provides an analog-modulated optical signal that is modulated in response to output data bits of a digital-to-digital mapping. A digital-to-digital conversion provides the mapping of input data words to the output data bits. The mapping enables adjustments to correct for non-linearities and other undesirable characteristics, thereby improving signal quality.

The invention relates to a display device comprising a display plane, on which one or more planar display regions 10, 11 are arranged, said planar regions 10, 11 being covered by transparent coverings. A single transparent covering 3 covers all the planar display regions 10, 11 of the display device, is formed three-dimensionally on the viewer's side by regions of differing thicknesses and is connected on the side facing away from the viewer to the planar display regions 10, 11 by means of optical bonding. The refractive index of the material of the covering 3 corresponds to the refractive index of the optical-bonding material 8.

Provided is an optical phase shifter. The optical phase shifter includes: a slab waveguide in which a first slab region doped into a first conductivity type and a second slab region doped into a second conductivity type are arranged side by side to form a PN junction; and a rib waveguide disposed on the slab waveguide such that one side of the rib waveguide makes contact with the first slab region, and an opposite side of the rib waveguide makes contact with the second slab region, wherein the rib waveguide includes first to third rib waveguide layers that are sequentially stacked, the first and third rib waveguide layers include silicon (Si), and the second rib waveguide layer includes silicon-germanium (SiGe).

A lead pin (2a,2b) penetrates a metal stem (1). A support block (3) is mounted on the metal stem (1). A dielectric substrate (4) is mounted on a side surface of the support block (3). A signal line (5a,5b) is formed on the dielectric substrate (4). One end of the signal line (5a,5b) is connected to the lead pin (2a,2b). A semiconductor optical modulation device (6) is mounted on the dielectric substrate (4). A conductive wire (8a,8b) connects the other end of the signal line (5a,5b) and the semiconductor optical modulation device (6). The semiconductor optical modulation device (6) includes a plurality of optical modulators (6b,6c) separated from each other.

A photonic integrated circuit (PIC) device has photonic devices arranged in an array with respect to control and common conductors. Each of the photonic devices has a photonic component (e.g., photodiode, thermo-optic phase shifter, etc.) and a switching diode connected in series with one another between a control connection and a common connection. The photonic component has at least one optical port, which can be coupled to a waveguide in the PIC device. The switching diode is configured to switch between reverse and forward bias in response to the electrical signals. In this way, control circuitry for providing control and monitoring signals to the conductors can be greatly simplified, and the PIC device can be more compact.

High bandwidth (e.g., > 100 GHz) modulators and methods of fabricating such are provided. An EAM comprises a waveguide mesa comprising a continuous multi-quantum well (MQW) layer; a plurality of electrode segments disposed on the waveguide mesa; and a microstrip transmission line disposed on an insulating material layer and in electrical communication with the plurality of electrode segments via conducting bridges. The waveguide mesa comprises alternating active sections and passive sections. An electrode segment of the plurality of electrodes is disposed on a respective one of the active sections. Portions of the continuous MQW layer disposed in each of the active sections having an energy gap defining an active energy gap value. Portions of the continuous MQW layer disposed in each of the passive sections having an energy gap defining an passive energy gap value. The active energy gap value is less than the passive energy gap value.