Disclosed are a micro-ring modulator and a method for manufacturing a micro-ring modulator. The micro-ring modulator includes at least one straight waveguide (10) and at least one surface plasmon polariton micro-ring resonator (20) coupled to the straight waveguide (10). The straight waveguide (10) is configured for transmitting an optical signal; and the surface plasmon polariton micro-ring resonator (20) is configured for modulating an intensity of an optical signal with a wavelength corresponding to the surface plasmon polariton micro-ring resonator (20).

The invention relates to a display device comprising a display plane, on which one or more planar display regions 10, 11 are arranged, said planar regions 10, 11 being covered by transparent coverings. A single transparent covering 3 covers all the planar display regions 10, 11 of the display device, is formed three-dimensionally on the viewer's side by regions of differing thicknesses and is connected on the side facing away from the viewer to the planar display regions 10, 11 by means of optical bonding. The refractive index of the material of the covering 3 corresponds to the refractive index of the optical-bonding material 8.

Provided is an optical phase shifter. The optical phase shifter includes: a slab waveguide in which a first slab region doped into a first conductivity type and a second slab region doped into a second conductivity type are arranged side by side to form a PN junction; and a rib waveguide disposed on the slab waveguide such that one side of the rib waveguide makes contact with the first slab region, and an opposite side of the rib waveguide makes contact with the second slab region, wherein the rib waveguide includes first to third rib waveguide layers that are sequentially stacked, the first and third rib waveguide layers include silicon (Si), and the second rib waveguide layer includes silicon-germanium (SiGe).

Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.

Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

A method of processing by controlling one or more beam characteristics of an optical beam may include: launching the optical beam into a first length of fiber having a first refractive-index profile (RIP); coupling the optical beam from the first length of fiber into a second length of fiber having a second RIP and one or more confinement regions; modifying the one or more beam characteristics of the optical beam in the first length of fiber, in the second length of fiber, or in the first and second lengths of fiber; confining the modified one or more beam characteristics of the optical beam within the one or more confinement regions of the second length of fiber; and/or generating an output beam, having the modified one or more beam characteristics of the optical beam, from the second length of fiber. The first RIP may differ from the second RIP.

Provided is a beam deflector including: a first electrode layer including a plurality of electrode patterns that are arranged in a first direction; a second electrode layer provided to oppose the first electrode layer; a liquid crystal layer provided between the first electrode layer and the second electrode layer in a second direction perpendicular to the first direction, and including a plurality of liquid crystal molecules; an input channel unit including a plurality of input channels; a demultiplexer configured to divide each of the input channels into a preset number of divided channels, and connect the divided channels to the electrode patterns; and a control circuit connected to the demultiplexer, and configured to control an output signal output from the divided channels to the first electrode layer.

A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Provided are an optical modulating device and a system including the optical modulating device. The optical modulating device includes a substrate, and a phase modulator formed on the substrate and including a Fabry-Perot cavity. The Fabry-Perot cavity of the phase modulator includes a first reflective layer, a second reflective layer, and a tunable core formed between the first reflective layer and the second reflective layer, wherein the tunable core is formed of a semiconductor material and is configured to modulate a phase of light corresponding to modulation of a refractive index of the tunable core according to electrical control.