A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

An electro-optic element having multiple regions is disclosed. The electro-optic element comprises an electro-optic medium disposed between two electrodes. Further, the electro-optic medium is operable between activated and un-activated states based, at least in part, on exposure to an electrical potential. In some embodiments, in response to an electrical potential of a first polarity, the electro-optic medium may be substantially activated in one region and substantially un-activated in another region. In response to an electrical potential of a second polarity opposite the first polarity, the electro-optic medium may be substantially activated in both regions. In other embodiments, the electro-optic medium is operably activated such that electro-optic medium is activated in one region and un-activated in another region, regardless of polarity.

A method is proposed for generating single photons with a predetermined wavelength f.sub.V, with the following steps: i) generating a single photon, preferably in a source and a resonator, wherein the single photon has a resonator wavelength f.sub.R and a resonator bandwidth f.sub.BR, ii) measuring the resonator wavelength f.sub.R, preferably in a wavelength standard, wherein the single photon is guided from the resonator to the wavelength standard via a beam guide, iii) comparing the resonator wavelength f.sub.R with the predetermined wavelength f.sub.V and generating a control signal on the basis of the comparison, preferably in a controller, iv) adjusting the resonator using the control signal in order to change the resonator wavelength f.sub.R toward or to the predetermined wavelength f.sub.V, v) repeating steps i to iv) until the resonator wavelength f.sub.R corresponds to the predetermined wavelength f.sub.V and then coupling out.

A ring resonator optical modulator comprises: an optical region in which optical radiation can propagate in a circular path having an inner radius and an outer radius coincident with an outer perimeter of the ring resonator optical modulator; a MOS capacitor structure having an upper gate device layer and a lower body device layer, and an insulating material being disposed between the upper gate device layer and the lower body device layer; and a cladding region. The optical radiation is confined within the optical region. The insulating material has a first region disposed in the optical region having a first thickness and a second region having a second thickness greater than the first thickness, the second region being disposed radially inwardly from the inner radius of the optical region, such that the optical radiation is radially confined toward the outer side of the inner radius of the optical region.

A ring resonator optical modulator comprises: an optical region in which optical radiation can propagate in a circular path having an inner radius and an outer radius coincident with an outer perimeter of the ring resonator optical modulator; a MOS capacitor structure having an upper gate device layer and a lower body device layer, and an insulating material being disposed between the upper gate device layer and the lower body device layer; and a cladding region. The optical radiation is confined within the optical region. The insulating material has a first region disposed in the optical region having a first thickness and a second region having a second thickness greater than the first thickness, the second region being disposed radially inwardly from the inner radius of the optical region, such that the optical radiation is radially confined toward the outer side of the inner radius of the optical region.

An electro-optic element having multiple regions is disclosed. The electro-optic element comprises an electro-optic medium disposed between two electrodes. Further, the electro-optic medium is operable between activated and un-activated states based, at least in part, on exposure to an electrical potential. In some embodiments, in response to an electrical potential of a first polarity, the electro-optic medium may be substantially activated in one region and substantially un-activated in another region. In response to an electrical potential of a second polarity opposite the first polarity, the electro-optic medium may be substantially activated in both regions. In other embodiments, the electro-optic medium is operably activated such that electro-optic medium is activated in one region and un-activated in another region, regardless of polarity.

A photonic integrated circuit comprises a silicon nitride waveguide, an electro-optic modulator formed of a III-nitride waveguide structure disposed on the silicon nitride waveguide, a dielectric cladding covering the silicon nitride waveguide and electro-optic modulator, and electrical contacts disposed on the dielectric cladding and arranged to apply an electric field to the electro-optic modulator.

A beam steering apparatus may include: a mirror; a refractive index modulation layer disposed on the mirror; a nanoantenna on the refractive index modulation layer; and an insulating layer disposed between the nanoantenna and the refractive index modulation layer, wherein the insulating layer has a thickness distribution in which a first thickness of the insulating layer on a central region of the mirror is less than a second thickness of the insulating layer on an edge region of the mirror, wherein a refractive index of the refractive index modulation layer is modulated to control propagation direction of beam.

An optical pulse for an extreme ultraviolet (EUV) light source may be formed by illuminating a semiconductor material of a modulation system with a first light beam having a first wavelength; applying a voltage to the semiconductor material for a time duration, the applied voltage being sufficient to modify an index of refraction of the semiconductor material such that a polarization state of a light beam having a second wavelength passing through the semiconductor material is modified to pass through at least one polarization-based optical element of the modulation system; and forming an optical pulse by passing a second light beam having the second wavelength through the semiconductor material during the time duration.

A meta device may include: a substrate; a mirror disposed on the substrate; a refractive index modulation layer disposed on the mirror; a nanoantenna facing the mirror with the refractive index modulation layer, the refractive index modulation layer being disposed between the nanoantenna and the mirror; and an insulating layer disposed between the nanoantenna and the refractive index modulation layer and having a non-uniform thickness. Since the thickness of the insulating layer is not uniform, a withstanding voltage characteristic of the meta device is improved.