A device for modulating the amplitude of an incident laser radiation of wavelength λ.sub.i is provided. The device includes a metal bottom layer above which there is a semiconductive layer contains a stack of a plurality of quantum wells above which there is a structured metal top layer, the two metal layers being reflective to the incident laser radiation, the structuring of the top layer and the distance between said two metal layers being small enough for the device to form an optical microcavity having at least one resonance mode; at least a part of the quantum wells, called active wells, having an intersubband absorption at a central wavelength λ.sub.ISB=hc/E.sub.ISB, the coupling between said intersubband transition at said central wavelength λ.sub.ISB and one of the modes of the microcavity driving the excitation of cavity polaritons and a Rabi splitting at the energies E.sub.ISB±ℏΩ.sub.Rabi with Ω.sub.Rabi the Rabi frequency; said device including an electric circuit configured to apply two distinct voltage differences, V.sub.0 and V.sub.1, between the two metal layers, the device absorbing the incident radiation for the voltage difference V.sub.0 and the device reflecting or transmitting the incident radiation for the voltage difference V.sub.1.

A device for generating photons includes a quantum box inserted into an optical cavity of micro-pillar type having at least one optical mode, the quantum box having at least one fundamental state and two states with one elementary excitation, the optical cavity having a bottom face and a top face, the bottom face bearing an electrical contact, the photon generation device advantageously comprises at least three electrical bonding pads electrically insulated from one another, arranged around the top face of the cavity.

Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

A device for modulating the amplitude of an incident laser radiation of wavelength ?.sub.i is provided. The device includes a metal bottom layer above which there is a semiconductive layer contains a stack of a plurality of quantum wells above which there is a structured metal top layer, the two metal layers being reflective to the incident laser radiation, the structuring of the top layer and the distance between said two metal layers being small enough for the device to form an optical microcavity having at least one resonance mode; at least a part of the quantum wells, called active wells, having an intersubband absorption at a central wavelength ?.sub.ISB=hc/E.sub.ISB, the coupling between said intersubband transition at said central wavelength ?.sub.ISB and one of the modes of the microcavity driving the excitation of cavity polaritons and a Rabi splitting at the energies E.sub.ISB???.sub.Rabi with ?.sub.Rabi the Rabi frequency; said device including an electric circuit configured to apply two distinct voltage differences, V.sub.0 and V.sub.1, between the two metal layers, the device absorbing the incident radiation for the voltage difference V.sub.0 and the device reflecting or transmitting the incident radiation for the voltage difference V.sub.1.

Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

The disclosed technology generally relates to an electro-optical device based on III-V and/or II-VI and/or group IV semiconductors. In one aspect, the electro-optical device includes a support region and a ridge structure extending from the support region. The ridge structure includes a bottom region provided on the support region and having at least one layer of a first semiconductor material that has a first conductivity type. The ridge structure also includes an intermediate region provided on the bottom region and having an active region. The intermediate region further includes at least one layer of a second semiconductor material, and has a trapezoid-shaped top region with a top surface, side surfaces, and inclined surfaces connecting the top surface to the side surfaces. The ridge structure also includes a capping layer provided on the side surfaces and the inclined surfaces of the intermediate region and having at least one layer of a third semiconductor material that has a higher band-gap than the second semiconductor material. The ridge structure also includes a fin structure extending upwards from the top region and having at least one layer of a fourth semiconductor material that has a second conductivity type.