The disclosure is related to creating different functional micro devices by integrating functional tuning materials and creating an encapsulation capsule to protect these materials. Various embodiments of the present disclosure also related to improve light extraction efficiencies of micro devices by mounting micro devices at a proximity of a corner of a pixel active area and arranging QD films with optical layers in a micro device structure.

A display apparatus includes a liquid crystal panel; light sources configured to emit blue light; a reflective sheet including four edge portions and a first hole and a second hole on each of the four edge portions of the reflective sheet, the first hole disposed at a first distance from an edge of the reflective sheet, and the second hole disposed at a second distance from the edge of the reflective sheet, wherein the second distance is greater than the first distance; and first and second light conversion dots, wherein the first light conversion dots are disposed around the first hole of the reflective sheet, and the second light conversion dots are disposed around the second hole of the reflective sheet, wherein a size of each of the first light conversion dots is greater than a size of each of the second light conversion dots.

The present invention relates inter alia to a color display comprising nanoparticles and color filters.

The present disclosure relates to quantum dot nanoparticles useful for targeting and manipulating mitochondrial function, and to methods of targeting and manipulating mitochondrial function using such quantum dot nanoparticles.

An optical semiconductor device includes an active layer having a plurality of quantum dot layers. The plurality of quantum dot layers include: a first quantum dot layer doped with a p-type impurity; and a second quantum dot layer doped with an n-type impurity and having an emission wavelength different from that of the first quantum dot layer.

The invention refers to a quantum dot light diffuser plate that can be assembled on a backlight module with blue LEDs as the bottom light source. Microstructures having concave portions and convex portions are formed on the surface of the diffuser plate. A quantum dot layer comprising green quantum dots and red quantum dots is applied only on the concave portions of the microstructures, and thus is separated by the convex portions into small parts independent of each other. A water-blocking and gas-blocking layer is arranged on the upper surface of the quantum dot layer. The water vapor and oxygen from the outside cannot penetrate the side end faces of the quantum dot layer and invade the entire quantum dot layer, such that, the diffuser plate of the invention can have the advantages of simple process, low cost and high production yield.

A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.

A curable resin composition contains quantum dots (A), a resin (B), a photopolymerizable compound (C), a photopolymerization initiator (D), an antioxidant (E), a leveling agent (F), and a solvent (G), wherein the resin (B) has a weight-average molecular weight in terms of polystyrene of less than 10000 and an acid value of 90 mg KOH/g or more and 150 mg KOH/g or less.

A device having a layered structure that includes a layer of phase change material and a matrix material layer having embedding quantum emitters is tuned. An electric field is applied through the matrix material layer and the layer of phase change material to change the emission wavelengths of the quantum emitters. A phase of the phase change material is changed, in a non-volatile manner, in each of one or more of local areas of the phase change material, to form local alterations that are opposite to respective ones of the quantum emitters in the matrix material layer, to locally modify the electric field at the respective quantum emitters.

The objective of the invention is to provide a wavelength conversion film demonstrating a high optical density, a wavelength conversion film forming composition used suitably for forming the wavelength conversion film, and a production method for a cluster-containing quantum dot that may be applied suitably to the wavelength conversion film and the wavelength conversion film forming composition. In this invention, for a wavelength conversion film containing a quantum dot converting blue light into red light or green light, the light beam transmittance of the wavelength conversion film at 450 nm wavelength is set to 40% or lower, the light beam transmittance of the wavelength conversion film at 650 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is red, and the light beam transmittance of the wavelength conversion film at 550 nm wavelength is set to 90% or higher if the hue of the light beam after the wavelength conversion is green.