A semiconductor device includes an electrode which is arranged on an organic material with an insulation film interposed therebetween and which does not easily peel away from the organic material along with the insulation film. An insulation film in a region including pad portions of a phase shift electrode and a modulation electrode has openings at the centers of the pad portions of the phase shift electrode and the modulation electrode, the edge portions of which are formed on the phase shift electrode and the modulation electrode. In this way, the adjoining edges of the phase shift electrode and modulation electrode and the insulation film are all covered by the insulation film so as not to be exposed to the atmosphere. By covering the cracks that occur in the insulation film in the production process with the insulation film made of SiO.sub.2, SiN.sub.X, SiON.sub.X or the like, an organic solvent such as acetone or ethanol used in the process can be prevented from seeping in between the insulation film and the organic material through the cracks in the insulation film.

An optical waveguide (100) is disclosed, for guiding light in a photonic circuit comprising a layer of phase change material (101) for modulating the phase of the guided light. The phase change material (101) is switchable between at least a stable crystalline state and a stable amorphous state each with different refractive indexes. The phase change material (101) exhibits an extinction coefficient of less than 0.1 in both states for wavelengths greater than 1000 nm.

Disclosed are an optical modulation device and a phase modulation method using the same. The optical modulation device includes a reflection plate, an insulating film over the reflection plate, dielectric patterns aligned on the insulating film in a first direction and extended in parallel in a second direction intersecting the first direction, and first and second graphene patterns provided between the dielectric patterns and alternately aligned in the first direction. The dielectric patterns and the first and second graphene patterns fully cover the top of the insulating film. Two dielectric patterns adjacent to each other in the first direction with one of the first graphene patterns interposed therebetween form one dielectric pattern pair. The dielectric pattern pair is provided in plural. The dielectric pattern pairs are isolated from each other in the first direction with one of the second graphene patterns interposed therebetween. A width of each of the first graphene patterns in the first direction is different from a width of each of the second graphene patterns in the first direction.

Methods and systems are described for adjusting an optical signal. An example device can comprise a plurality of waveguides. The device can comprise an interference structure optically coupled to the plurality of waveguides and configured to receive an optical signal and distribute the optical signal to the plurality of waveguides as a plurality of optical signals. The device can comprise a plurality of phase shifters coupled to corresponding waveguides of the plurality of waveguides and configured to adjust the phase of one or more of the plurality of optical signals. The device can comprise a plurality of emitters optically coupled to corresponding outputs of the plurality of phase shifters and configured to output the adjusted plurality of optical signals. The adjusted plurality of optical signals can be output as light patterns reconfigurable in at least one dimension.

An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.

The present invention describes a semiconductor interferometric device capable of modulating an electromagnetic wave by modulating the carrier concentration inside a semiconductor device. The variation of the carrier concentration within the device causes the variation of the physical properties inside the semiconductor material leading to a shift of the reflected and absorbed spectrums. One or more rays are generated within the device so as to operate the device through interference effects. The present invention may be utilized for an antenna or for beam steering purposes comprising an array of semiconductor interferometric reflecting devices. Furthermore the same principle could be utilized to generate tunable meta-surfaces, so as to modulate phase, amplitude or polarization of an incident electromagnetic wave.

External modulators, variable optical attenuators, optical gates, etc. employing Mach-Zehnder interferometers (MZIs) are a common structure within photonic integrated circuits and solutions for addressing the ever increasing demands for larger bandwidth and higher capacity in telecommunication and datacom networks. In most applications, but particularly data centers with potentially tens of thousands of optical links where direct board level applications would be preferred with CMOS compatibility, low power consumption is required. Equally, reducing the footprint of optical devices whilst increasing the functional integration on a line card for example does little for power consumption unless the device capacitance and drive voltage can be reduced as well. Accordingly, it would be beneficial to provide MZIs that require reduced phase shifts to reduce power consumption as the square of reduced applied voltage. Integrated loop mirror Mach-Zehnder interferometer (MZI) provide such a reduction in required phase shift.

A coherent frequency modulated receiver for receiving and detecting arriving optical signals which comprises an electrically controllable optical beam scanner receiving optical input beams arriving at different angles in a field of view of the electrically controllable optical beam scanner, the electrically controllable optical beam scanner conveying a scanned optical input beam as its output optical beam; a grating coupler responsive to the output or reflected optical beam of the electrically controllable optical beams scanner, the grating coupler having a waveguided output; an optical local oscillator laser having a waveguided output; an FMCW signal generator; an optical modulator responsive to the optical waveguided outputs of the optical local oscillator laser and also to an electrical FMCW signal from the FMCW signal generator; a pair of second order non-linear optical elements for frequency upconverting respective outputs of the optical modulator and the grating coupler; and at least one photodiode optically coupled to an outputs of the pair of second order non-linear optical elements.

An optical modulation device configured of a planar optical waveguide, includes: a light incidence unit which allows light to be incident on the planar optical waveguide; a Mach-Zehnder interferometer which includes a first optical splitter section branching the light incident on the light incidence unit, two arm portions guiding the light branched by the first optical splitter section, a phase modulation unit linearly disposed on each of the two arm portions, and a first optical coupler section combining the light guided from the two arm portions; a light launching unit which launches the light combined by the first optical coupler section from the planar optical waveguide; and a traveling-wave electrode which includes an input unit and an output unit, and applies a voltage to the phase modulation unit.

Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.