Embodiments described herein may be related to apparatuses, processes, and techniques directed to phase match and impedance match to enable a higher baud rate for ultra-high-speed TW-MZM for 100 Gbaud or above for PAM applications, and/or 120 Gbaud or above for QAM applications. Embodiments described herein may include ultra-high-speed TW-MZM based on differential signal-to-signal (SS) TW using a push-pull PN structure. These embodiments facilitate high speeds for a TW-MZM due to decreased complexity by eliminating a ground in the TW. Other embodiments may be described and/or claimed.

An optical modulator uses an optoelectronic phase comparator configured to provide, in the form of an electrical signal, a measure of a phase difference between two optical waves. The phase comparator includes an optical directional coupler having two coupled channels respectively defining two optical inputs for receiving the two optical waves to be compared. Two photodiodes are configured to respectively receive the optical output powers of the two channels of the directional coupler. An electrical circuit is configured to supply, as a measure of the optical phase shift, an electrical signal proportional to the difference between the electrical signals produced by the two photodiodes.

An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.

A waveguide structure for use in a balanced push-pull Mach Zehnder modulator. The waveguide structure comprises a plurality of layers. The layers comprise, in order: an insulating or semi-insulating substrate; an lower cladding layer; an waveguide core layer; and an upper cladding layer. The lower cladding layer, waveguide core layer, and upper cladding layer are etched to form: a signal waveguide and a ground waveguide, which are connected via the lower cladding layer; and a signal line and a ground line, each located adjacent to the respective waveguide, and each connected to the respective waveguide via one or more respective resistive structures connected in the plane of the lower cladding layer.

An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.

An optical device useful for spatial light modulation. The device comprises: a semiconductor layer having a first surface and a second surface, the semiconductor having an electric field-dependent resonance wavelength; a first electrode electrically connected to the semiconductor layer; a first insulating layer adjacent to the first surface of the semiconductor layer, and a second insulating layer adjacent to the second surface of the semiconducting layer, the first and the second insulating layers each being optically transparent at the resonance wavelength; a first group of at least one gate electrodes disposed adjacent to the first insulating layer, and a second group of at least one gate electrodes disposed adjacent to the second insulating layer, each gate electrode being at least 80% optically transparent at the resonance wavelength; wherein the first and the second groups of gate electrodes, taken together, form at least two regions in the semiconductor layer, an electrostatic field in each of the at least two regions being independently controllable by application of voltage to the first and the second groups of gate electrodes, the at least two regions abutting each other along at least one boundary.

A second substrate is formed on a first substrate. The second substrate includes a Mach-Zehnder modulation unit and a coplanar line. Further, the second substrate is formed on and bonded to the first substrate via an adhesive layer made of a non-conductive adhesive. The Mach-Zehnder modulation unit has an optical modulation region by an electro-optic effect. The coplanar line transmits a modulated signal to the optical modulation region.

Provided are a multilayer thin-film structure and a phase shifting device using the same. The multilayer thin-film structure includes at least one crystallization preventing layer and at least one dielectric layer that are alternately stacked. The at least one crystallization preventing layer includes an amorphous material, and a thickness of the at least one crystallization preventing layer is less than a thickness of the at least one dielectric layer.

A method and apparatus for driving an optical push-pull Mach-Zehnder modulator.

A second substrate is formed on a first substrate. The second substrate includes a Mach-Zehnder modulation unit and a coplanar line. Further, the second substrate is formed on and bonded to the first substrate via an adhesive layer made of a non-conductive adhesive. The Mach-Zehnder modulation unit has an optical modulation region by an electro-optic effect. The coplanar line transmits a modulated signal to the optical modulation region.