A device for generating individual photons with energy E includes quantum emitters, having at least one determined transition with the energy E from an energy level N* to a lower energy level N1. The emitters are near a propagation path running from first to second regions. The device also includes at least one light source to output light, for propagation along the path. The light has the energy E for resonant excitation of the energy level N*. The emitters are arranged so that optionally exactly Z emitters are illuminated, forming an optical thickness τ>0 for the light along the path. The number Z lies in a range of Z0±10% and Z0 is a number at which a maximum destructive interference in the second region occurs between a two-photon component of the light scattered on the ZO emitters and a two-photon component of the non-scattered light.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is Hz, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

A device for generating individual photons with energy E includes quantum emitters, having at least one determined transition with the energy E from an energy level N* to a lower energy level N1. The emitters are near a propagation path running from first to second regions. The device also includes at least one light source to output light, for propagation along the path. The light has the energy E for resonant excitation of the energy level N*. The emitters are arranged so that optionally exactly Z emitters are illuminated, forming an optical thickness τ>0 for the light along the path. The number Z lies in a range of ZO±10% and ZO is a number at which a maximum destructive interference in the second region occurs between a two-photon component of the light scattered on the ZO emitters and a two-photon component of the non-scattered light.

Nonlinear on-chip optical devices using AlScN are described herein. In one aspect, an optical component having nonlinear characteristics can include a first substrate defining a refractive index; and a nonlinear layer, the nonlinear layer disposed on the first substrate, the nonlinear layer comprising an amount of scandium (Sc), and the nonlinear layer defining a refractive index that is higher than the refractive index of the first substrate.

Systems and methods for measuring or inspecting semiconductor structures using broadband infrared radiation are disclosed. The system may include an illumination source comprising a pump source configured to generate pump light and a nonlinear optical (NLO) assembly configured to generate broadband IR radiation in response to the pump light. The system may also include a detector assembly and a set of optics configured to direct the IR radiation onto a sample and direct a portion of the IR radiation reflected and/or scattered from the sample to the detector assembly.

A method of performing heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and a second precursor gas, to form a heteroepitaxial growth of one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN on the substrate; wherein the substrate comprises one of GaAs, AlAs, InAs, GaP, InP, ZnSe, GaSe, CdSe, InSe, ZnTe, CdTe, GaTe, HgTe, GaSb, InSb, AlSb, CdS, GaN, and AlN; wherein the carrier gas is H.sub.2, wherein the first precursor is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the second precursor is one of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide), H.sub.2S (hydrogen sulfide), and NH.sub.3 (ammonia). The process may be an HVPE (hydride vapor phase epitaxy) process.

Disclosed are an optical member and a display device having the same. The optical member includes a first substrate, a plurality of wavelength conversion parts provided on the first substrate while being spaced apart from each other, and a sealing layer on a top surface of the wavelength conversion parts and at a lateral side of the wavelength conversion parts. Each of the wavelength conversion parts includes a host on the first substrate, and a plurality of wavelength conversion particles in the host.

A method and apparatus for generating high-order harmonics in a solid-state medium comprising integrated semiconductor devices and electronics. The high-order harmonics interact with and are modified by the internal electric field associated with the operation of the integrated semiconductor devices and electronics. Measurement of the high-order harmonics after modification by the internal electric fields amounts to high resolution (temporal and spatial) dynamic imaging of the internal electric fields associated with the integrated semiconductor devices and electronics.

A periodically poled microring resonator structure, a method for fabrication of the periodically poled microring resonator structure, and a method to achieve giant single-photon nonlinearity are disclosed. The strong single-photon nonlinearity in the microring resonator structure is achieved through its optimized design and fabrication procedures.

The technology disclosed in this patent document for optical devices for modulating light using nonlinear optical materials exhibiting electro-optical effects. Suitable nonlinear optical materials can be formed over a silicon-based semiconductor substrate via a silicon processing compatible process. In one application, such a device can be implemented for steering light based on a unique two-dimensional array of phased optical modulators using integrated photonic chip fabrication technologies to provide high performance and small footprint device packaging. The phased optical modulators can be phase shifting elements, each of which can be configured as a vertical-cavity surface-emitting phase shifter (VCSEP) to provide effective phase changes via both the control of the optical refractive index of the nonlinear optical material and the metal-dielectric surface plasmon effect.