A dual frequency optical resonator configured for optical coupling to light having a first frequency ω1. The dual frequency optical resonator includes a plurality of alternating layer pairs stacked in a post configuration, each layer pair having a first layer formed of a first material and a second layer formed of a second material, the first material and second materials being different materials. The first layer has a first thickness and the second layer has a second thickness, the thicknesses of the first and second layer being selected to create optical resonances at the first frequency ω1 and a second frequency ω2 which is a harmonic of ω1 and the thicknesses of the first and second layer also being selected to enhance nonlinear coupling between the first frequency ω1 and a second frequency ω2.

Efficient harmonic light generation can be achieved with ultrathin films by coupling an incident pump wave to an epsilon-near-zero (ENZ) mode of the thin film. As an example, efficient third harmonic generation from an indium tin oxide nanofilm (λ/42 thick) on a glass substrate for a pump wavelength of 1.4 μm was demonstrated. A conversion efficiency of 3.3×10.sup.−6 was achieved by exploiting the field enhancement properties of the ENZ mode with an enhancement factor of 200. This nanoscale frequency conversion method is applicable to other plasmonic materials and reststrahlen materials in proximity of the longitudinal optical phonon frequencies.

A quantum cascade laser includes a semiconductor substrate, an optical waveguide formed on a first surface of the semiconductor substrate, and a temperature adjusting member. The optical waveguide includes a first region and a second region located on one side with respect to the first region in the optical waveguide direction of the optical waveguide. The first region generates a first light having a first wavelength, and the second region generates a second light having a second wavelength. The optical waveguide generates an output light having a frequency corresponding to a difference between the first wavelength and the second wavelength by difference-frequency generation. A recess for suppressing heat transfer between the first region and the second region is formed at a second surface of the semiconductor substrate. The temperature adjusting member includes a first temperature adjusting member for adjusting the temperature of the second region.

Optical component (10) for modulating light field (1) incident thereon, particularly amplitude and/or phase in dependency on intensity (I) thereof, includes stack (11) of refractive layers (12, 13) on substrate (14), made of materials having third-order nonlinearity, and having alternatingly varying refractive indices (n), including linear contribution (n.sub.0) and non-linear contribution (n.sub.2), and determining reflectance and transmittance spectra of the optical component, wherein refractive layers (12, 13) are configured such that reflectance and transmittance of the optical component have a Kerr effect based dependency on intensity (I) of the incident light field with n=n.sub.0+I.Math.n.sub.2, and refractive layers (12, 13) are made of at least one of dielectric and semiconductor layers, wherein non-linear contribution (n.sub.2) is below 10.sup.−12 cm.sup.2/W. A resonator device including the optical component, a method of modulating a light field using the optical component and a method of manufacturing the optical component are described.

According to some aspects, a transmissive and all-dielectric optical component/limiter with great cutoff efficiency using Vanadium Dioxide (VO.sub.2) as the active component is disclosed. In some embodiments, Vanadium dioxide is used for an optical limiter due to the large contrast in optical constants upon undergoing the semiconductor to metal phase transition. When triggered optically, this transition occurs within 60 fs, making the device suitable for an ultrafast laser environment. In addition, the phase transition threshold is tunable by applying stress or doping; therefore, the device cutoff intensity can be adjusted to fulfill specific requirements.

Colloidal quantum wells have discrete energy states and electrons in the quantum wells undergo interband and intersubband state transitions. The transmissivity of a colloidal quantum well may be tuned by actively controlling the states of the colloidal quantum wells enabling ultrafast optical switching. A primary excitation source is configured to provide a primary excitation to promote a colloidal quantum well from a ground state to a first excitation state. A secondary excitation source is configured to provide a secondary excitation to the colloidal quantum well to promote the colloidal quantum well from the first excitation state to the second excitation state with the first and second excitation states being subbands in the conduction band of the colloidal quantum well.

An apparatus and method are provided for generating harmonic light from a pump beam that is impinged on a metasurface comprising a plurality of all-dielectric resonator bodies. A multiple quantum well structure formed in each resonator body includes asymmetric coupled quantum wells having intersubband transition frequencies that couple to Mie resonances of the resonator bodies.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is H.sub.2, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), H.sub.2Te (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

A laser source includes a first laser device configured to generate a first laser beam having a first wavelength, a second laser device configured to generate a second laser beam having a second wavelength, which is different from the first wavelength, and a non-linear crystal configured to receive simultaneously the first and second laser beams and to generate a third laser beam that has a third wavelength, which is larger than each of the first and second wavelengths. The non-linear crystal has a length and a width, and a variable poling period is distributed across the width so that the third wavelength varies within a given wavelength range based on an incident position of the first and second laser beams along the width of the non-linear crystal.

A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH.sub.3 (arsine), PH.sub.3 (phosphine), H.sub.2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH.sub.3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H.sub.2S (hydrogen sulfide), NH.sub.3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.