A semiconductor device comprising a wafer with a preferably single-piece semiconductor substrate, in particular silicon substrate, and at least one integrated electronic component extending in and/or on the semiconductor substrate, the wafer having a front-end-of-line and a back-end-of-line lying there above, the front-end-of-line comprising the integrated electronic component or at least one of the integrated electronic components, and a photonic platform fabricated on the side of the wafer facing away from the front-end-of-line, which photonic platform comprises at least one waveguide and at least one electro-optical device, in particular at least one photodetector and/or at least one electro-optical modulator, wherein the electro-optical device or at least one of the electro-optical devices of the photonic platform is connected to the integrated electronic component or at least one of the integrated electronic components of the wafer.

An optical device includes a first substrate, a second substrate, a plurality of separation walls, one or more optical waveguides, and one or more spacers. The first substrate has a surface which extends in a first direction and a second direction intersecting the first direction. The second substrate faces the first substrate. The plurality of separation walls are positioned between the first substrate and the second substrate and extend in the first direction. The one or more optical waveguides are positioned between the first substrate and the second substrate and include one or more dielectric members which are positioned between the plurality of separation walls and which extend in the first direction. The one or more spacers are directly or indirectly sandwiched between the first substrate and the second substrate and positioned around the one or more optical waveguides.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

1An optical device includes a substrate, a dielectric substance that is laminated on the substrate, an optical waveguide that is surrounded by the dielectric substance, and a heater electrode that is disposed on the optical waveguide and that is surrounded by the dielectric substance. The optical waveguide is a rib type optical waveguide that includes a slab and a rib on the slab, that is located below the heater electrode, and that has a structure in which a width of the slab is less than or equal to 11 times a width of the rib.

An optical device includes a first substrate having a first surface, a second substrate having a second surface, at least one optical waveguide, and a plurality of spacers, disposed on at least either the first surface or the second surface, that include a first portion and a second portion. The first portion of the plurality of elastic spacers is at least one elastic spacer located in a region between the first substrate and the second substrate in which the first substrate and the second substrate overlap each other as seen from an angle parallel with a direction perpendicular to the first surface. The second portion of the plurality of elastic spacers is at least one elastic spacer located in a region in which the first substrate and the second substrate do not overlap each other as seen from an angle parallel with the direction perpendicular to the first surface.

Structures for a polarization switch and methods of fabricating a structure for a polarization switch. A waveguide core is located on a substrate. The waveguide core is composed of silicon nitride. An active layer is positioned proximate to a section of the waveguide core. The active layer composed of a phase change material having a first state with a first refractive index and a second state with a second refractive index.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.

Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

An electro-optically active device comprising: a silicon on insulator (SOI) substrate including a silicon base layer, a buried oxide (BOX) layer on top of the silicon base layer, a silicon on insulator (SOI) layer on top of the BOX layer, and a substrate cavity which extends through the SOI layer, the BOX layer and into the silicon base layer, such that a base of the substrate cavity is formed by a portion of the silicon base layer; an electro-optically active waveguide including an electro-optically active stack within the substrate cavity; and a buffer region within the substrate cavity beneath the electro-optically active waveguide, the buffer region comprising a layer of Ge and a layer of GaAs.