Some embodiments are directed to a light modulator comprising transparent or reflective substrates, multiple electrodes being applied to the substrates in a pattern across the substrate. A controller may apply an electric potential to the electrodes to obtain an electro-magnetic field between the electrodes providing electrophoretic movement of the particles towards or from an electrode.

Electrochromic devices and components thereof and systems and methods for controlling electrochromic devices are disclosed. Further, electrochromic materials, electrochromic compositions and electrochromic layers useful for the devices and systems can be in the form of a gel. The present disclosure also provide methods to fabricate electrochromic devices and components thereof, electrochromic compositions, layers and gels.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

An active matrix substrate includes a first pixel region defined by first and second source bus lines adjacent to each other and first and second gate bus lines adjacent to each other and further includes a first pixel electrode and a first oxide semiconductor TFT that are associated with the first pixel region. The first oxide semiconductor TFT includes an oxide semiconductor layer and a gate electrode electrically connected to the first gate bus line. The oxide semiconductor layer includes a channel region and a low-resistance region including first and second regions located on opposite sides of the channel region. When viewed in a direction normal to the substrate, the low-resistance region extends across the first source bus line to another pixel region and partially overlaps a pixel electrode disposed in the other pixel region with an insulating layer interposed therebetween.

Optical read-out of a cryogenic device (such as a superconducting logic or detector element) can be performed with a forward-biased optical modulator that is directly coupled to the cryogenic device without any intervening electrical amplifier. Forward-biasing at cryogenic temperatures enables very high modulation efficiency (1,000-10,000 pm/V) of the optical modulator, and allows for optical modulation with millivolt driving signals and microwatt power dissipation in the cryogenic environment. Modulated optical signals can be coupled out of the cryostat via an optical fiber, reducing the thermal load on the cryostat. Using optical fiber instead of electrical wires can increase the communication bandwidth between the cryogenic environment and room-temperature environment to bandwidth densities as high as Tbps/mm.sup.2 using wavelength division multiplexing. Sensitive optical signals having higher robustness to noise and crosstalk, because of their immunity to electromagnetic interference, can be carried by the optical fiber.

A composite film (100, 200) and a preparation method therefor. The composite film (100, 200) may comprise: a substrate (110, 210); a first isolation layer (130), which is located on the top surface of the substrate (110, 210); and an optical film structure (A, B), which is located on the first isolation layer (130) and comprises a stacked structure formed from a light modulation layer (150), a light transmission layer (170) and an active layer (190) that generates light. The active layer (190) may be in contact with one of the light modulation layer (150) and the light transmission layer (170).

An optical waveguide device includes a substrate on which an optical waveguide is formed, and an object that is disposed on the substrate. The optical waveguide includes a mode conversion/branching portion that converts a mode of a light wave propagating through the optical waveguide and branches the light wave, and the object is disposed to cover a part or the whole of the mode conversion/branching portion or not to cover the mode conversion/branching portion when the substrate is viewed in a plan view. In a case where the object is disposed to cover a part of the mode conversion/branching portion, the object is disposed not to consecutively cover a section over a length of a predetermined value or higher in an advancing direction of a light wave.

An array substrate and a display panel are provided. The array substrate includes a plurality of recess-shaped light-shielding patterns. An oxide semiconductor layer is correspondingly formed in a recess of one of the light-shielding patterns. In comparison with increasing a plane area for improving light-shielding performance of the light-shielding patterns, an area of an orthographic projection of the recess-shaped light-shielding patterns on the array substrate is smaller. Therefore, an area of a light-transmitting region of the array substrate is greater, thereby increasing an aperture of the array substrate.

It relates to a thermo-responsive dual band electrochromic device, which is capable of selectively controlling the amount of sunlight radiation transmitted in the visible and in the near-infrared regions by operating under four distinct optical regimes, namely: fully transparent, visible blocking, near-infrared blocking, and fully blocking. The device can be regulated either by an electric stimulus, namely by controlling the sign and the intensity of the applied bias voltage, or by a thermal stimulus. In the latter the attenuation of incoming thermal radiation results increased as temperature increases. The thermo-responsive dual band electrochromic device comprises a first electrode consisting of a first transparent conductive substrate topped by a first electro-optically active layer and a second electrode consisting of a second transparent conductive substrate topped by a second electro-optically active layer separated by a temperature-dependent ion conductive layer consisting of a thermo-responsive polymer gel, an ion conductor and a plasticizer.

An active matrix substrate includes a plurality of thin film transistors including an oxide semiconductor layer, an interlayer insulating layer, a plurality of pixel electrodes arranged above the interlayer insulating layer, a common electrode arranged between the pixel electrode and the interlayer insulating layer and also configured to function as a touch sensor electrode, a first dielectric layer arranged between the interlayer insulating layer and the common electrode, a second dielectric layer arranged between the common electrode and the pixel electrode, a plurality of touch wiring lines arranged between the interlayer insulating layer and the common electrode and formed of a third conductive film, and a plurality of pixel contact portions, in which each of the plurality of pixel contact portions includes a drain electrode of the thin film transistor, a connection electrode formed of the third conductive film and electrically connected to the drain electrode in a lower opening formed in the interlayer insulating layer, and a pixel electrode electrically connected to the connection electrode in an upper opening formed in the first dielectric layer and the second dielectric layer.