An active matrix substrate is provided with a plurality of oxide semiconductor TFTs including a plurality of first TFTs. An oxide semiconductor layer of each oxide semiconductor TFT includes a channel region, a source contact region, and a drain contact region. In a view from a normal direction of the substrate, the channel region is a region located between the source contact region and the drain contact region and overlapping a gate electrode, and the channel region includes a first end portion and a second end portion that oppose each other and extend in a first direction from the source contact region side toward the drain contact region side, a source side end portion that is located on the source contact region side of the first and second end portions and extends in a second direction that intersects the first direction, and a drain side end portion that is located on the drain contact region side of the first and second end portions and extends in the second direction. Each first TFT further includes a light blocking layer located between the oxide semiconductor layer and the substrate. In a view from the normal direction of the substrate, the light blocking layer includes an opening region that overlaps part of the channel region and a light blocking region that overlaps another part of the channel region. In a view from the normal direction of the substrate, the light blocking region includes a first light blocking portion that extends in the first direction over the first end portion of the channel region and a second light blocking portion that extends in the first direction over the second end portion of the channel region; each of the first light blocking portion and the second light blocking portion includes a first edge portion and a second edge portion that oppose each other and extend in the first direction; at least part of the first edge portion overlaps the channel region; and the second edge portion is located on an outer side of the channel region and does not overlap the channel region.

An optical phase modulator includes a lower cladding layer, a core formed on the lower cladding layer, an upper cladding layer formed over the core, and a heater. In addition, the optical phase modulator includes a semiconductor layer which is embedded in the upper cladding layer, is disposed above the core, and is formed of a compound semiconductor, and the heater is constituted by an impurity introduction region formed in the semiconductor layer.

Embodiments of the present disclosure disclose a display panel, which includes a cover plate, a pixel layer, and a driving circuit layer. The driving circuit layer is disposed between the cover plate and the pixel layer. The driving circuit layer includes a metal layer and a darkening layer, the darkening layer is disposed on a side of the metal layer towards the cover plate, and a reflectivity of the darkening layer of external light is less than a reflectivity of the metal layer of the external light. When the external light is irradiated, the reflectivity of the darkening layer is less; therefore rainbow mura generated when the external light source illuminates the display panel.

A display device includes: a first substrate and a second substrate disposed facing each other; a gate line and a first data line disposed on the first substrate; a thin film transistor connected to the gate line and the first data line; a pixel electrode connected to the thin film transistor; and a color filter disposed on at least one of the first substrate and the second substrate, the color filter overlapping the pixel electrode. The color filter has a width greater than a distance between the the first data line and a second data line disposed adjacent to the first data line.

The present invention has a pixel which includes a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element.

A backlight unit for a liquid crystal display device, the backlight unit including: an light emitting diode (“LED”) light source; a light conversion layer disposed separate from the LED light source to convert light emitted from the LED light source to white light and to provide the white light to the liquid crystal panel; and a light guide panel disposed between the LED light source and the light conversion layer, wherein the light conversion layer includes a semiconductor nanocrystal and a polymer matrix, and wherein the polymer matrix includes a first polymerized polymer of a first monomer including at least two thiol (—SH) groups, each located at a terminal end of the first monomer, and a second monomer including at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer.

According to one embodiment, a display device includes a gate line extending in a first direction, first and second source lines crossing the gate line and arranged in the first direction, a first light-shielding layer having first and second openings, and an oxide semiconductor layer crossing the gate line, and in the display device, the first opening and the second opening are arranged in a second direction crossing the first direction between the first source line and the second source line, the gate line is located between the first opening and the second opening, and the oxide semiconductor layer has a first overlapping portion overlapping the first opening.

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with a top surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer. The fifth insulating layer includes a first opening and a second opening in a region overlapping with the semiconductor layer and not overlapping with the first conductive layer. A second conductive layer and a third conductive layer are electrically connected to the semiconductor layer in the first opening and the second opening, respectively. The third to fifth insulating layers include metal, and oxygen or nitrogen. A sixth insulating layer includes a region in contact with a top surface and a side surface of the fifth insulating layer and a region in contact with the first insulating layer.

A high laser damage threshold reflective optically addressed liquid crystal spatial light modulator for shaping 1053 nm linearly polarized light beams, comprising a computer-controlled LCoS electrical addressable spatial light modulator, polarization beam splitter, and polarizer, Liquid crystal cell, analyzer, AC power supply, where the liquid crystal cell comprises a transparent conductive film antireflection film layer, a transparent conductive film base layer, a first transparent conductive layer, a liquid crystal alignment layer, a liquid crystal layer, an alignment element, a reflective film layer, a light guide layer, and a second transparent conductive layer. By changing the transparent conductive layer material of the light-transmitting part of the liquid crystal cell from ITO to gallium nitride material, the damage threshold of the high-energy laser is improved, which facilitates application of beam shaping in high-power laser devices.