Disclosed are a micro-ring modulator and a method for manufacturing a micro-ring modulator. The micro-ring modulator includes at least one straight waveguide (10) and at least one surface plasmon polariton micro-ring resonator (20) coupled to the straight waveguide (10). The straight waveguide (10) is configured for transmitting an optical signal; and the surface plasmon polariton micro-ring resonator (20) is configured for modulating an intensity of an optical signal with a wavelength corresponding to the surface plasmon polariton micro-ring resonator (20).

A display is described which comprises a plurality of pixels (12), wherein each pixel (12) comprises a plasmonic resonator (26) including first and second metallic material elements (16, 22) and incorporating a layer (18) of a phase change material, the plasmonic resonator (26) being arranged such that in one material state of the phase change material (18) the electric field coupling between the second metallic material element (22) and the phase change material layer (18) is strong and so strong absorption of selected wavelengths of the incident light occurs, whereas in another state of the phase change material (18) the electric field coupling between the metallic material elements (16, 22) and the phase change material layer (18), and between the first and second metallic material elements (16, 22) is weak and so re-radiation of incident light occurs, the pixel (12) being of high reflectance.

According to an example aspect of the present invention, there is provided an electro-optic plasmonic device comprising: a slot waveguide that is defined by a first metallic electrode, a second metallic electrode and dielectric material in a slot between the first and second metallic electrodes. The device is configured to utilize the electric field induced Pockels effect.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

Disclosed are an optical modulation device and a phase modulation method using the same. The optical modulation device includes a reflection plate, an insulating film over the reflection plate, dielectric patterns aligned on the insulating film in a first direction and extended in parallel in a second direction intersecting the first direction, and first and second graphene patterns provided between the dielectric patterns and alternately aligned in the first direction. The dielectric patterns and the first and second graphene patterns fully cover the top of the insulating film. Two dielectric patterns adjacent to each other in the first direction with one of the first graphene patterns interposed therebetween form one dielectric pattern pair. The dielectric pattern pair is provided in plural. The dielectric pattern pairs are isolated from each other in the first direction with one of the second graphene patterns interposed therebetween. A width of each of the first graphene patterns in the first direction is different from a width of each of the second graphene patterns in the first direction.

A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.

An optical device for forming a distribution of a three-dimensional light field comprises: an array of individually addressable unit cells; each unit cell in the array of unit cells comprising a stack including: at least one electrode; and a resonance defining layer, comprising at least a phase change material, PCM, layer, wherein the resonance defining layer is patterned to define a geometric structure dimensioned for defining a wavelength-dependent in-plane resonance of an electromagnetic wave; wherein the at least one electrode causes a phase change of the phase change material based on receiving a control signal to alter a wavelength-dependency of resonance in the resonance defining layer for controlling the optical property of the unit cell; wherein unit cells in the array of unit cells are separated such that the PCM layer of a unit cell is separated from the PCM layer in an adjacent unit cell.

An optical phase shifter may include a waveguide core that has a top surface, and a semiconductor contact that is laterally displaced relative to the waveguide core and is electrically connected to the waveguide core. A top surface of the semiconductor contact is above the top surface of the waveguide core. The waveguide core may include a p-type core region and an n-type core region. A p-type semiconductor region may be in physical contact with the n-type core region of the waveguide core, and an n-type semiconductor region may be in physical contact with the p-type core region of the waveguide core. A phase shifter region and a light-emitting region may be disposed at different depth levels, and the light-emitting region may emit light from a phase shifter region that is in a position adjacent to the light-emitting region.

A electronic method, includes receiving, by a graphene structure, a SPP mode of a particular frequency. The electronic method includes receiving, by the graphene structure, a driving microwave voltage. The electronic method includes generating, by the graphene structure, an entanglement between optical and voltage fields.

Example implementations described herein are directed to an interface configured to redirect light between a connector connected to a printed optical board (POB) via an optical waveguide, and a photonic integrated circuit (PIC), the interface involving two-dimensionally distributed waveplates (TDWs) having multiple layers of p-doped and n-doped silicon, the TDWs configured to be driven to change a dielectric constant at a two dimensional location on the TDWs such that the received light is redirected at the two dimensional location.