A monolithically integrated, tunable infrared pixel comprises a combined broadband detector and graphene-enabled tunable metasurface filter that operate as a single solid-state device with no moving parts. Functionally, tunability results from the plasmonic properties of graphene that are acutely dependent upon the carrier concentration within the infrared. Voltage induced changes in graphene's carrier concentration can be leveraged to change the metasurface filter's transmission thereby altering the “colors” of light reaching the broadband detector and hence its spectral responsivity. The invention enables spectrally agile infrared detection with independent pixel-to-pixel spectral tunability.

A vehicle component, and a method and tool for forming the component are provided. First and second tools with first and second surfaces, respectively, are provided. The first tool is translated along a first axis towards the second tool such that the first and second surfaces cooperate to define a mold cavity configured to form an accessory mount feature with an aperture. The second surface is configured to form an integrated rib extending outwardly from an upper surface of the mount feature to a planar bearing surface surrounding the aperture with the planar bearing surface oriented at an acute angle relative to the upper surface. The first axis is substantially parallel to the upper surface.

A backplane, a dimming method thereof, and a display device having same are disclosed. The display device includes the backplane which has a first substrate and a second substrate opposite to each other, an electrolyte layer, and a driving electrode which is connected to the first substrate and the second substrate, respectively. When the driving electrode is controlled to apply different voltages between the first substrate and the second substrate, the electrolyte layer shows different translucent states.

A semiconductor device comprising a wafer with a preferably single-piece semiconductor substrate, in particular silicon substrate, and at least one integrated electronic component extending in and/or on the semiconductor substrate, the wafer having a front-end-of-line and a back-end-of-line lying there above, the front-end-of-line comprising the integrated electronic component or at least one of the integrated electronic components, and a photonic platform fabricated on the side of the wafer facing away from the front-end-of-line, which photonic platform comprises at least one waveguide and at least one electro-optical device, in particular at least one photodetector and/or at least one electro-optical modulator, wherein the electro-optical device or at least one of the electro-optical devices of the photonic platform is connected to the integrated electronic component or at least one of the integrated electronic components of the wafer.

Disclosed is a plasmonic device (10), comprising: a substrate (11); and a dielectric layer (13) arranged between a base metal layer (12) and a structured metal layer (14) which form with respect to the substrate (11) a vertical stack of layers, wherein the structured metal layer (14) includes arranged in a horizontal direction an input structure (141) for enabling an input section (21), a waveguide structure (142) for enabling a plasmonic waveguide (22), and an output structure (143) for enabling an output section (23), wherein the input section (21) is configured to receive an optical input signal (31) and transmit input power (41) to the plasmonic waveguide (22), wherein the plasmonic waveguide (22) is configured to receive input power (41) from the input section (21) and transmit output power (43) to the output section (23), and wherein the output section (23) is configured to receive output power (43) from the plasmonic waveguide (22) and transmit an optical output signal (33).

An OPO including a resonator comprising a material having a nonlinear susceptibility generating an output electromagnetic field in response to a pump electromagnetic field inputted into the material. The output electromagnetic field has one or more output wavelengths longer than one or more pump wavelengths of the pump electromagnetic field. The resonator has dimensions less than, or on the order of, the one or more output wavelengths in free space.

An active IR camouflage device may include a base layer, a first dielectric layer over the base layer, a phase transition material layer over the first dielectric layer, a second dielectric layer over the phase transition material layer, and a first metal layer over the second dielectric layer and defining a pattern of openings therein. The active IR camouflage device may have circuitry configured to selectively cause a transition from a first phase state to a second phase state of the phase transition material layer to control IR reflectance/emission of a top plasmonic layer, making it appear/disappear from the IR detector/camera. In some embodiments, the active IR camouflage device may also include a second metal layer between the base layer and the first dielectric layer.

Described embodiments include a plasmonic apparatus and method. The plasmonic apparatus includes a substrate having a first negative-permittivity layer comprising a first plasmonic surface. The plasmonic apparatus includes a plasmonic nanoparticle having a base with a second negative-permittivity layer comprising a second plasmonic surface. The plasmonic apparatus includes a dielectric-filled gap between the first plasmonic surface and the second plasmonic surface. The plasmonic apparatus includes a plasmonic cavity created by an assembly of the first plasmonic surface, the second plasmonic surface, and the dielectric-filled gap, and having a spectrally separated first fundamental resonant cavity wavelength λ.sub.1 and second fundamental resonant cavity wavelength λ.sub.2. The plasmonic apparatus includes a plurality of fluorescent particles located in the dielectric-filled gap. Each fluorescent particle of the plurality of fluorescent particles having an absorption spectrum including the first fundamental resonant cavity wavelength λ.sub.1 and an emission spectrum including the second fundamental resonant cavity wavelength λ.sub.2.

A method and apparatus for generating high-order harmonics in a solid-state medium comprising integrated semiconductor devices and electronics. The high-order harmonics interact with and are modified by the internal electric field associated with the operation of the integrated semiconductor devices and electronics. Measurement of the high-order harmonics after modification by the internal electric fields amounts to high resolution (temporal and spatial) dynamic imaging of the internal electric fields associated with the integrated semiconductor devices and electronics.

A nanostructured material system for efficient collection of photo-excited carriers is provided. They system comprises a plurality of plasmonic metal nitride core material elements coupled to a plurality of semiconductor material elements. The plasmonic nanostructured elements form ohmic junctions at the surface of the semiconductor material or at close proximity with the semiconductor material elements. A nanostructured material system for efficient collection of photo-excited carriers is also provided, comprising a plurality of plasmonic transparent conducting oxide core material elements coupled to a plurality of semiconductor material elements. The field enhancement, local temperature increase and energized hot carriers produced by nanostructures of these plasmonic material systems play enabling roles in various chemical processes. They induce, enhance, or mediate catalytic activities in the neighborhood when excited near the resonance frequencies.