The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit configured to rotate and support a substrate; a liquid supply unit configured to supply a liquid to the substrate supported on the support unit; and an optical module for heating the substrate supported on the support unit, and wherein the support unit includes a teaching member having a grid displaying a reference point which matches a center of the support unit.

The inventive concept provides a mask treatment apparatus. The mask treatment may include a support unit that supports the mask, and a light irradiation unit that irradiate the mask with a light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates the light, and a light modulation element that modulates the light generated by the light source and forms an irradiation pattern.

The inventive concept provides a mask treating method. The mask treating method includes treating a mask by supplying a liquid to the mask, and irradiating a laser to a region of the mask on which a specific pattern is formed while the liquid remains on the mask; moving an optical module including a laser unit configured to irradiate the laser between a process position for treating the substrate and a standby position deviating from the process position; and adjusting a state of the optical module at an inspection port provided at the standby position to a set condition before the optical module is moved to the process position.

The present disclosure relates to an apparatus for treating a substrate. The substrate treatment apparatus includes a support unit that supports a substrate, a liquid supply unit that supplies a liquid to the substrate supported by the support unit, and a laser unit that heats the substrate supported by the support unit, wherein the laser unit includes an oscillation unit that emits a light, and a diffraction unit that separates the light into a plurality of light bundles and irradiates the substrate supported by the support unit with an adjustment light having a profile changed from a profile of the light.

The invention relates to a method for determining a registration error of a structure on a mask for semiconductor lithography, comprising the following method steps: generating an image of at least one region of the mask, determining at least one measuring contour in the image, and matching the forms of a design contour and a measuring contour to one another while at the same time matching the registration of the two contours.

The invention relates to a method for determining a registration error of a structure on a mask for semiconductor lithography, comprising the following method steps: generating an image of at least one region of the mask, determining at least one measuring contour in the image, and matching the forms of a design contour and a measuring contour to one another while at the same time matching the registration of the two contours.

The present disclosure provides a photomask and a method for repairing a photomask. The photomask includes a substrate, a reflective multi-layer stack over the substrate, a capping layer over the reflective multi-layer stack, an absorber layer over the capping layer, a first patch layer in direct contact with the absorber layer, and a second patch layer over a surface of the first patch layer.

The present disclosure provides a photomask and a method for repairing a photomask. The photomask includes a substrate, a reflective multi-layer stack over the substrate, a capping layer over the reflective multi-layer stack, an absorber layer over the capping layer, a first patch layer in direct contact with the absorber layer, and a second patch layer over a surface of the first patch layer.

A method includes: providing a photomask, wherein the photomask includes a multilayer stack, a light-absorption layer, an anti-reflection coating and a light-absorption layer. The method further includes: receiving information on the photomask; determining a bias voltage according to the information; determining a scan recipe of an electron beam writer system based on the bias voltage; and performing a repairing operation on at least one of the anti-reflection coating and the light-absorption layer by the electron beam writer system with the scan recipe.

A method for manufacturing a semiconductor includes: receiving a photomask substrate including a shielding layer; defining a chip region and a peripheral region adjacent to the chip region; forming a design pattern in the chip region; forming a reference pattern by emitting one first radiation shot and a beta pattern by emitting a plurality of second radiation shots in the peripheral region, wherein a pixel size of the first radiation shot is greater than a pixel size of the second radiation shot; comparing a reference roughness of a boundary of the reference pattern and a beta roughness of a boundary of the beta pattern; transferring the design pattern to the shielding layer if a difference between the reference roughness and the beta roughness is within a tolerance; and transferring the design pattern of the photomask to a semiconductor substrate.