A light-emitting device includes: a first light- emitting unit that extends in one direction and has a first emission surface located along the one direction, the first emission surface emitting light; a second light-emitting unit that is located in the one direction with respect to the first light-emitting unit, that extends in the one direction, and that has a second emission surface located along the one direction, the second emission surface emitting light; a first cleaning unit that is capable of moving in the one direction and an opposite direction that is opposite to the one direction to clean the first emission surface; a second cleaning unit that is capable of moving in the one direction and the opposite direction to clean the second emission surface; and a transmission unit that extends from the first cleaning unit and the second cleaning unit in the one direction and that transmits a moving force for moving the first cleaning unit and the second cleaning unit to the first cleaning unit and the second cleaning unit.

A light-emitting device includes: a first light- emitting unit that extends in one direction and has a first emission surface located along the one direction, the first emission surface emitting light; a second light-emitting unit that is located in the one direction with respect to the first light-emitting unit, that extends in the one direction, and that has a second emission surface located along the one direction, the second emission surface emitting light; a first cleaning unit that is capable of moving in the one direction and an opposite direction that is opposite to the one direction to clean the first emission surface; a second cleaning unit that is capable of moving in the one direction and the opposite direction to clean the second emission surface; and a transmission unit that extends from the first cleaning unit and the second cleaning unit in the one direction and that transmits a moving force for moving the first cleaning unit and the second cleaning unit to the first cleaning unit and the second cleaning unit.

A method for detecting deposited particles (P) on a surface (11) of an object (3, 14) includes: irradiating a partial region of the surface (11) of the object (3, 14) with measurement radiation; detecting measurement radiation scattered on the irradiated partial region, and detecting particles in the partial region of the surface of the object (3, 14) based on the detected measurement radiation. In the steps of irradiating and detecting, the surface (11) of the object (3, 14) has an anti-reflective coating (13) and/or a surface structure (15) for reducing the reflectivity of the surface (11) for the measurement radiation (9), wherein the particle detection limit is lowered due to the anti-reflective coating (13) and/or the surface structure (15). Also disclosed are a wafer (3) and a mask blank for carrying out the method.

The present invention relates to a process for reducing the number of defects in an ordered film comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

The present invention relates to a process for reducing the number of defects in an ordered film comprising a block copolymer (BCP). The invention also relates to the compositions used to obtain these ordered films and to the resulting ordered films that can be used in particular as masks in the lithography field.

A photomask correction method capable of increasing the photomask precision is provided. The photomask correction method comprises measuring an intensity profile of a laser, acquiring etching amount data corresponding to the measured intensity profile using a library, determining a process parameter of the laser based on the etching amount data, and correcting a photomask with the laser according to the determined process parameter.

A photomask correction method capable of increasing the photomask precision is provided. The photomask correction method comprises measuring an intensity profile of a laser, acquiring etching amount data corresponding to the measured intensity profile using a library, determining a process parameter of the laser based on the etching amount data, and correcting a photomask with the laser according to the determined process parameter.

A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.

A device (20) for detecting a temperature on a surface (15) of an optical element (14) for semiconductor lithography. The device includes an optical element (14) having a face (16) irradiated with electromagnetic radiation (7, 8, 43), a temperature recording device (21), and a temperature controlled element (22) configured to be temperature-controlled and arranged so that the predominant proportion of the intensity of the thermal radiation (25.2) detected by the temperature recording device and reflected by reflection at the surface of the optical element is emitted by the temperature-controlled element.

Also disclosed are an installation (1) for producing a surface (15) of an optical element (14) for semiconductor lithography and a method for producing a surface (15) of an optical element (14) of a projection exposure apparatus (30), wherein the surface is temperature-controlled and the surface temperature is detected during the temperature control.

Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.