Patent classifications
G03F1/80
METAL OXIDE FILM-FORMING COMPOSITION AND METHOD OF PRODUCING METAL OXIDE FILM USING THE COMPOSITION
A metal oxide film-forming composition including a tertiary alkyloxycarbonyloxy group-containing aromatic hydrocarbon ring-modified fluorene compound represented by Formula (1) below; metal oxide nanoparticles surface-treated with a capping agent; and a solvent. In the formula, ring Z.sup.1 represents an aromatic hydrocarbon ring, R.sup.1a and R.sup.1b each independently represents a halogen atom, a cyano group, or an alkyl group, R.sup.2a and R.sup.2b each independently represents an alkyl group, R.sup.3a, R.sup.3b, R.sup.4a, R.sup.4b, R.sup.5a, and R.sup.5b each independently represents an alkyl group having 1 to 8 carbon atoms, k1 and k2 each independently represents an integer of 0 or more and 4 or less, and m1 and m2 each independently represents an integer of 0 or more and 6 or less
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METAL OXIDE FILM-FORMING COMPOSITION AND METHOD OF PRODUCING METAL OXIDE FILM USING THE COMPOSITION
A metal oxide film-forming composition including a tertiary alkyloxycarbonyloxy group-containing aromatic hydrocarbon ring-modified fluorene compound represented by Formula (1) below; metal oxide nanoparticles surface-treated with a capping agent; and a solvent. In the formula, ring Z.sup.1 represents an aromatic hydrocarbon ring, R.sup.1a and R.sup.1b each independently represents a halogen atom, a cyano group, or an alkyl group, R.sup.2a and R.sup.2b each independently represents an alkyl group, R.sup.3a, R.sup.3b, R.sup.4a, R.sup.4b, R.sup.5a, and R.sup.5b each independently represents an alkyl group having 1 to 8 carbon atoms, k1 and k2 each independently represents an integer of 0 or more and 4 or less, and m1 and m2 each independently represents an integer of 0 or more and 6 or less
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Image differentiated multiplex assays
Provided herein are encoded microcarriers for analyte detection in multiplex assays. The microcarriers are encoded with an analog code for identification and include a capture agent for analyte detection. Also provided are methods of making the encoded microcarriers disclosed herein. Further provided are methods and kits for conducting a multiplex assay using the microcarriers described herein.
Image differentiated multiplex assays
Provided herein are encoded microcarriers for analyte detection in multiplex assays. The microcarriers are encoded with an analog code for identification and include a capture agent for analyte detection. Also provided are methods of making the encoded microcarriers disclosed herein. Further provided are methods and kits for conducting a multiplex assay using the microcarriers described herein.
Extreme ultraviolet mask blank hard mask materials
Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; an absorber layer on the capping layer, the absorber layer comprising an antimony-containing material; and a hard mask layer on the absorber layer, the hard mask layer comprising a hard mask material selected from the group consisting of CrO, CrON, TaNi, TaRu and TaCu.
REFLECTIVE MASK AND FABRICATING METHOD THEREOF
The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.
REFLECTIVE MASK AND FABRICATING METHOD THEREOF
The prevent disclosure provides a method for forming a reflective mask. In some embodiments, the method includes forming a carbon-containing layer over a substrate; forming a reflective multilayer over the carbon-containing layer; forming an absorption pattern over the reflective multilayer. In some embodiments, the method includes growing a light absorbing layer over a substrate; polishing the light absorbing layer; forming a reflective layer over the polished light absorbing layer; forming an absorption pattern over the reflective layer.
Method of etch model calibration using optical scatterometry
Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.
Method of etch model calibration using optical scatterometry
Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.
Method for modifying the wettability and/or other biocompatibility characteristics of a surface of a biological material by the application of gas cluster ion beam technology and biological materials made thereby
A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.