An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

An improved methods and systems for detecting defect(s) on a mask are disclosed. An improved method comprises inspecting an exposed wafer after the wafer was exposed, by a lithography system using a mask, with a selected process condition that is determined based on a mask defect printability under the selected process condition; and identifying, based on the inspection, a wafer defect that is caused by a defect on the mask to enable identification of the defect on the mask.

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

An inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to inspect the photomask; a mirror configured to direct a first radiation beam from the radiation source to the photomask at a first tilt angle; an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop; and a detector configured to generate an image of the photomask according to the second radiation beam.

An inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to inspect the photomask; a mirror configured to direct a first radiation beam from the radiation source to the photomask at a first tilt angle; an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop; and a detector configured to generate an image of the photomask according to the second radiation beam.