Provided is a negative resist film laminate comprising a thermoplastic film, which is a first support body, and a negative resist film, wherein the negative resist film contains (A) an alkali-soluble resin having a phenolic hydroxy group, (B) a plasticizer containing polyester, (C) a photoacid generator, (D) an epoxy compound containing on average four or more epoxy groups per molecule, and (E) a benzotriazole compound and/or an imidazole compound.

A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is heated after selectively exposing the photoresist layer to actinic radiation. A gas is flowed over the photoresist layer during the heating the photoresist layer. A flow of the gas is varied during the heating the photoresist layer, and the photoresist layer is developed after the heating the photoresist layer to form a pattern in the photoresist layer.

Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula Bi.sub.xO.sub.yC.sub.z on the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula RBi(NR.sub.2).sub.2 or R.sub.2BiNR.sub.2 where R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NR.sub.2 is piperidine, and R includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.