To provide a photosensitive composition excellent in a patterning property and capable of producing an organic thin-film transistor exhibiting high carrier mobility by being used in an insulation layer. A photosensitive composition comprising a polymer compound containing at least one repeating unit selected from the group consisting of a repeating unit represented by the following formula (1) and a repeating unit represented by the following formula (2) and a compound having at least two azide groups:

##STR00001##

In the formula (1), Ar.sup.1 represents a phenyl group or a naphthyl group, and in the formula (2), Ar.sup.2 represents a phenyl group or a naphthyl group. l and m are numbers satisfying that 115 and l+m>90 when the total amount of all repeating units contained in the above-described polymer compound is taken as 100.

A curable composition and a permanent resist film made using this curable composition are provided. The composition dissolves well in solvents, gives coatings superior in alkali developability, thermal decomposition resistance, light sensitivity, and resolution, and is particularly suitable for the formation of permanent resist films. Specifically, the composition is a curable composition for permanent resist films and contains a phenolic hydroxyl-containing compound (A) that has a molecular structure represented by structural formula (1): ##STR00001##
(where R.sup.1 is hydrogen, alkyl, or aryl, and n is an integer of 2 to 10; R.sup.2 is alkyl, alkoxy, aryl, aralkyl, or halogen, and m is an integer of 0 to 4; if m is 2 or more, the plurality of R.sup.2s may be the same or different from one another, and may be bonded to either of the two aromatic rings in the naphthylene structure) and a photosensitizer (B1) or curing agent (B2).

Embodiments in accordance with the present invention encompass self-imagable polymer compositions containing a colorant which are useful for forming films that can be patterned to create structures for color filters and microlens having applications in a variety of microelectronic devices, optoelectronic devices and displays, such as for example image sensors. The compositions of this invention can be tailored to form positive tone images for forming an array of images, which can be thermally transformed into an array of microlens. The images thus formed can then be used in color filter applications.

A resist composition including a base component which exhibits changed solubility in a developing solution under action of acid, and a compound (B1) having an anion moiety and a cation moiety and being represented by general formula (b1) (wherein R.sup.01 to R.sup.014 each independently represents a hydrogen atom or a hydrocarbon group which may have a substituent, or two or more of R.sup.01 to R.sup.014 may be mutually bonded to form a ring structure, provided that at least two of R.sup.01 to R.sup.014 are mutually bonded to form a ring structure, and at least one of R.sup.01 to R.sup.014 has an anion group, and the anion moiety as a whole forms an anion having a valency of n; n represents an integer of 1 or more; represents an integer of 1 or more; and M.sup.m+ represents an organic cation having a valency of m).

##STR00001##

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

It is an object of the present invention to provide a method of forming a high-contrast fine pattern onto a resist film. The present invention relates to a pattern forming method, comprising; applying a resist material onto a substrate to form a resist film, introducing a metal into the resist film, exposing, and developing. In addition, the present invention also relates to a resist material and a pattern forming apparatus.