A resist composition including a polymeric compound having a structural unit derived from a compound represented by general formula (a0-1), an onium salt having an anion moiety with a specific structure, and a photodecomposable base which is decomposed upon exposure and then loses the ability of controlling of acid diffusion. In formula (a0-1), Ra.sup.x0 represents a polymerizable group-containing group; Wa.sup.x0 represents an aromatic hydrocarbon group having a valency of (n.sub.ax0+1), provided that Ra.sup.x0 and Wa.sup.x0 may together form a condensed ring structure; n.sub.ax0 represents an integer of 1 to 3; Ya.sup.x01 represents a carbonyl group or a single bond; Ra.sup.x01 represents a hydrogen atom or a hydrocarbon group which may have a substituent. ##STR00001##

The organic EL display device includes at least a transparent electrode, an organic EL layer, and a non-transparent electrode in this order and further includes a black insulating layer, and the non-transparent electrode has a reflectance of 25%20%.

Photocurable compositions useful in the fabrication of 3D printed articles are formulated to contain a) at least one of a photoinitiator or a photo-releasable base and b) at least one t-amyl peroxide, in addition to at least one photocurable compound.

A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1):

##STR00001##

The unit structure of formula (1) is a unit structure of the formula (2):

##STR00002##

A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

There is provided a resist composition containing a resin. The resin includes a repeating unit (a) having one or more *OY.sub.0 groups substituted for an aromatic ring; and a phenolic hydroxyl group (b) or a partial structure (c) represented by Formula (X). Here, the *OY.sub.0 group is a group that is decomposed due to an action of an acid to generate a phenolic hydroxyl group, and Y.sub.0 is a specific protective group. In a case where the repeating unit (a) includes none of the phenolic hydroxyl group (b) and the partial structure (c), the repeating unit (a) is a repeating unit in which the *OY.sub.0 group is decomposed due to an action of an acid to generate two or more phenolic hydroxyl groups.

##STR00001##

The present invention provides a photosensitive resin composition and a cured film prepared therefrom. The photosensitive resin composition includes a mixture of two or more siloxane polymers having different dissolution rates with respect to an aqueous solution of tetramethylammonium hydroxide. The composition keeps high transparency and high sensitivity, which are advantages of a composition containing a siloxane polymer, and has excellent chemical resistance, thereby providing a cured film having excellent stability in a post-processing.

The present invention provides a negative type photosensitive resin composition having high sensitivity, excellent halftone characteristics, capability to form a small tapered pattern shape, and alkali-developability.

The negative type photosensitive resin composition includes, as an alkali-soluble resin (A), at least a weakly acidic group-containing resin (A1) and an unsaturated group-containing resin (A2), the weakly acidic group-containing resin (A1) containing an acidic group having an acid dissociation constant in the range of 13.0 to 23.0 in dimethyl sulfoxide, and the unsaturated group-containing resin (A2) containing an ethylenically unsaturated double bond group.

A photolithiographic method for fabricating bank structures with improved non-wetting properties to form well regions on a substrate using a photoresist composition comprising a cresol novolak resin, a photoactive diazonaphthoquinone sulfonic ester of a polyhydroxybenzophenone compound with at least one free hydroxyl group, and a non-ionic urethane polyglycol fluorosurfactant. Inkjet methods can be used to deposit active materials into the well areas. Color filter arrays and optoelectronic devices such as OLED devices can be made by this method.

To provide an alkaline developable negative-type photosensitive resin composition from which a cured film that has a high-resolution and low-taper pattern shape and that are excellent in heat resistance and light blocking property can be obtained. A negative-type photosensitive resin composition is characterized by containing an (A1) first resin, a (A2) second resin, a (C) photopolymerization initiator, and a (D) coloring agent, wherein the (A1) first resin is an (A1-1) polyimide and/or an (A1-2) polybenzo-oxazole, and wherein the (A2) second resin is one or more species selected from a (A2-1) polyimide precursor, a (A2-2) polybenzo-oxazole precursor, a (A2-3) polysiloxane, a (A2-4) cardo based resin, and an (A2-5) acrylic resin, and wherein a content ratio of the (A1) first resin in a total of 100 mass % of the (A1) first resin and the (A2) second resin is within the range of 25 to 90 mass %.

A resist composition including a polymeric compound having a structural unit derived from a compound represented by general formula (a0-1), an onium salt having an anion moiety with a specific structure, and a photodecomposable base which is decomposed upon exposure and then loses the ability of controlling of acid diffusion. In formula (a0-1), Ra.sup.x0 represents a polymerizable group-containing group; Wa.sup.x0 represents an aromatic hydrocarbon group having a valency of (n.sub.ax0+1), provided that Ra.sup.x0 and Wa.sup.x0 may together form a condensed ring structure; n.sub.ax0 represents an integer of 1 to 3; Ya.sup.x01 represents a carbonyl group or a single bond; Ra.sup.x01 represents a hydrogen atom or a hydrocarbon group which may have a substituent.

##STR00001##