A resist composition is provided comprising a base polymer and a quencher comprising a salt compound consisting of a cyclic ammonium cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

The present invention is a resist material containing a quencher, where the quencher contains a sulfonium salt of a carboxylic acid bonded to a maleimide group. In a chemically amplified resist material in which an acid is used as a catalyst, it is desired to develop a quencher that makes it possible to reduce LWR of line patterns and critical dimension uniformity (CDU) of hole patterns, and to improve sensitivity. For this purpose, it is necessary to reduce image blurs due to acid diffusion considerably. An object of the present invention is to provide: a resist material having high sensitivity, low LWR, and low CDU in both a positive resist material and a negative resist material; and a patterning process using the same.

A photoacid generator (PAG) anion, a photoresist composition, and a method are disclosed. The PAG anion includes a moiety, selected from an alkyl group, a monocyclic aromatic group, and a bicyclic aromatic group, that includes a carbon atom with a negative elementary charge. The PAG anion also includes an electron acceptor atom, selected from boron(III), aluminum(III), and phosphorus(V), which is covalently bonded to the carbon atom. The PAG anion also has at least one electron-withdrawing R group. The photoresist composition has a PAG that includes the PAG anion and a cation selected from triphenylsulfonium, diphenyliodonium, phenylthiolanium, and derivatives thereof. The method includes forming a layer of the photoresist composition over a material surface on a substrate, irradiating the layer to form a pattern of radiation-exposed regions, selectively removing portions of the irradiated layer to form exposed portions of the material surface, and etching or ion implanting the exposed portions.

A novel onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by photolithography using KrF or ArF excimer laser, EB or EUV, the resist composition has a high sensitivity and reduced acid diffusion and is improved in exposure latitude, MEF, and LWR. ##STR00001##

A resist composition including: a base material component (A), a compound (B1) represented by Formula (b1-1), and a fluorine additive component (F) which contains a fluororesin component (F1) having a constitutional unit (f1) represented by Formula (f-1) and a constitutional unit (f2) represented by Formula (f-2); in Formula (b1-1), V.sup.b01 represents a fluorinated alkylene group, R.sup.b02 represents a fluorine atom or a hydrogen atom, a total number of fluorine atoms as V.sup.b01 and R.sup.b02 is 2 or 3; in Formula (f-1), Rf.sup.1 represents a monovalent organic group having a fluorine atom; in Formula (f-2), Rf.sup.2 represents a group represented by Formula (f2-r-1), which is a group containing a polycyclic aliphatic cyclic group. ##STR00001##

A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: ##STR00001##
The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is linking group.

A fluorocarboxylic acid-containing polymer comprising recurring units having formula (A1), but not acid labile group-containing recurring units is provided. A resist composition comprising the same offers a high sensitivity and is unsusceptible to nano-bridging or pattern collapse independent of whether it is of positive or negative tone. ##STR00001##

A resist composition comprising a polymer is provided, the polymer comprising repeat units derived from a sulfonium or iodonium salt having a nitro-substituted benzene ring in a linker between a polymerizable unsaturated bond and a fluorosulfonic acid site. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200° C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Provided is a method of producing a light-emitting element, the method being capable of producing a light-emitting element including a first light emitting layer and banks on the first light emitting layer, without damaging the first light emitting layer. The method of producing a light-emitting element of the present disclosure includes: preparing a base element including a monochromatic first light emitting layer on a substrate; forming a patterned fluororesin film by disposing a photosensitive resin composition at least containing a fluororesin having a crosslinking site and a repeating unit derived from a hydrocarbon containing a fluorine atom, a solvent, and a photopolymerization initiator on the base element such that photosensitive resin composition partitions at least one region of the base element; and baking the patterned fluororesin film at a temperature of 200° C. or lower to cure the patterned fluororesin film.