A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1)
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4-(a+b)  Formula (1)
wherein R.sup.1 is an organic group of Formula (1-2) ##STR00001##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.3 is a hydrolyzable group; and Formula (2)
R.sup.7.sub.cR.sup.8.sub.dSi(R.sup.9).sub.4-(c+d)  Formula (2)
wherein R.sup.7 is an organic group of Formula (2-1) ##STR00002##
and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R.sup.9 is a hydrolyzable group.

The invention aims to provide a cured film that is high in sensitivity, able to form a pattern having a small-tapered shape after a development step and after a heat curing step, helpful to depress the difference in the width of patterned openings between before and after the heat curing step, and high in light-shielding capability and also aims to provide a negative type photosensitive resin composition that serves for the production thereof. The negative type photosensitive resin composition includes an alkali-soluble resin (A), a radical polymerizable compound (B), a photo initiator (C1), and a black colorant (Da); the alkali-soluble resin (A) including a first resin (A1) containing one or more selected from the group consisting of polyimide (A1-1), polyimide precursor (A1-2), polybenzoxazole (A1-3), polybenzoxazole precursor (A1-4), and polysiloxane (A1-5); and the radical polymerizable compound (B) including one or more selected from the group consisting of a fluorene backbone-containing radical polymerizable compound (B1) and an indane backbone-containing radical polymerizable compound (B2).

A photosensitive resin composition comprising (A) a vinyl ether compound, (B) an epoxy-containing silicone resin, and (C) a photoacid generator is provided. The composition enables pattern formation using radiation of widely varying wavelength, and the patterned film has high transparency, light resistance, and heat resistance.

A black photosensitive resin composition comprising (A) an acid crosslinkable group-containing silicone resin, (B) carbon black, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved reliability with respect to adhesion and crack resistance, resolution and flexibility while maintaining satisfactory light shielding properties.

An example resin composition includes an epoxy resin matrix, a first photoacid generator, and a second photoacid generator. The first photoacid generator includes an anion having a molecular weight less than about 250 g/mol. The second photoacid generator includes an anion having a molecular weight greater than about 300 g/mol. In an example, i) a cation of the first photoacid generator has, or ii) a cation of the second photoacid generator has, or iii) the cations of the first and second photoacid generators have a mass attenuation coefficient of at least 0.1 L/(g*cm) at a wavelength of incident light to cure the resin composition.

A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R.sup.2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.

##STR00001##

A method of operating a manufacturing platform includes moving a substrate through the manufacturing platform using one or more transfer modules. A dry resist is deposited on the substrate using a resist deposition module of the manufacturing platform. The substrate is examined for distortion with a metrology system that is part of a transfer module. The dry resist is exposed to UV or EUV radiation using an exposure tool of the manufacturing platform. Exposed or unexposed portions of the dry resist are removed using an etch module of the manufacturing platform.

In general, according to one embodiment, there is provided a semiconductor device including a substrate, an insulating layer formed above the substrate, and a conductive layer provided in the insulating layer. The insulating layer includes at least one cellulose fiber.

Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

As described herein, photosensitive composition comprises RSnL.sub.3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C≡CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL.sub.3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.