An alignment nozzle jig for centering a coater photoresist arm that includes an alignment nozzle block. The alignment nozzle jig also includes an endoscope holder removably secured to a bottom of the alignment nozzle block, an endoscope, and an alignment mark removably coupled to the endoscope holder opposite the alignment nozzle block. The alignment nozzle jig is retrieved from a nozzle bath by the coater arm and transferred to a center of a chuck in an associated process chamber. Via the endoscope, the coater photoresist arm is aligned with the center of the chuck using the alignment mark.

A dispensing system includes a dispense material supply that contains a dispense material and a dispensing pump connected downstream from the dispense material supply. The dispensing pump includes a body made of a first electrically conductive material, one or more first electrical contacts that are disposed on the body of the dispensing pump, and one or more first connection wires that are coupled between each one of the one or more first electrical contacts and ground. The dispensing system also includes a dispensing nozzle connected downstream from the dispensing pump and includes a tube made of a second electrically conductive material, one or more second electrical contacts that are disposed on an outer surface of the tube, and one or more second connection wires that are coupled between each one of the one or more second electrical contacts and the ground.

A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

Disclosed is an apparatus for treating a substrate, which includes: a first unit configured to perform a coating process of forming a film on a substrate; a transfer unit including a transfer robot transferring a substrate for which the coating process is terminated; and a controller controlling the first unit and the transfer unit, in which the controller controls the substrate for which the coating process is terminated in the first unit to rotate at a first rotational velocity until the substrate is transferred by the transfer unit.

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

Methods for making thin-films on semiconductor substrates, may be patterned using EUV, include: depositing the organometallic polymer-like material onto the surface of the semiconductor substrate, exposing the surface to EUV to form a pattern, and developing the pattern for later transfer to underlying layers. The depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.

A composition for removing edge beads from a metal-containing resist, and a method of forming patterns including step of removing edge beads using the same are provided. The composition for removing edge beads from a metal-containing resist includes an organic solvent, and a heptagonal ring compound substituted with at least one hydroxyl group (—OH). The heptagonal ring compound has at least two double bonds in the ring.

A coating film forming method includes: rotating a substrate at a first rotation speed in a coating cup with an upper surface open, and supplying and diffusing a coating solution for forming a coating film on the substrate; and after the supplying and diffusing the coating solution, drying the substrate by exhausting air through a gap between an annular member arranged above the substrate with centers thereof being located on a same axis and the front surface of the substrate, while rotating the substrate at a second rotation speed lower than the first rotation speed, wherein at the drying the substrate, a flow velocity of the air exhausted through the gap is higher than a flow velocity of air supplied from above the substrate in the coating cup to the substrate.

A surface treatment composition and methods for improving adhesion of an organic layer on a titanium-containing hardmask includes forming a self-assembled monolayer on a surface of the titanium-containing hardmask prior to depositing the organic layer. The self-assembled monolayer is formed from a blend of alkyl phosphonic acids of formula (I): X(CH.sub.2).sub.nPOOH.sub.2 (I), wherein n is 6 to 16 and X is either CH.sub.3 or COOH, wherein a ratio of the methyl terminated (CH.sub.3) alkyl phosphonic acid to the carboxyl terminated (COOH) alkyl phosphonic acid ranges from 25:75 to 75:25.

Provided is an apparatus for treating a substrate. The apparatus for treating a substrate may include: a liquid treating chamber configured to liquid-treat a substrate; and a controller configured to control the liquid treating chamber, and the liquid treating chamber may include a treating container having a treating space therein; a support unit configured to support and rotate the substrate in the treating space; a liquid supply unit configured to supply a liquid onto the substrate; and an elevation unit configured to adjust a relative height between the treating container and the support unit, and the controller may control the elevation unit so as to adjust the relative height between the treating container and the support unit according to a warpage state of the substrate supported on the support unit when conducting substrate treating by supplying the liquid onto the substrate while rotating the substrate.