A beam guide guides a laser beam on a device for extreme ultraviolet lithography. The beam guide has a scraper mirror for coupling out laser radiation and a positioning device for positioning the scraper mirror in a positioning plane defined by first and second positioning axes. The positioning device contains first and second positioning units assigned to the first and second positioning axes, respectively. The first positioning unit has a first linear guide and a first positioning drive. By the first positioning drive, the scraper mirror is moved together with the mirror-side guide element of the first linear guide relative to the mirror-remote guide element of the first linear guide along the first positioning axis into a target position. The second positioning unit has a second linear guide and a second positioning drive, the second linear guide has a mirror-side guide element and a mirror-remote guide element.

The present disclosure is directed to organotin cluster compounds having formula (I) and their use as photoresists in extreme ultraviolet lithography processes. ##STR00001##

The disclosure relates to a sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to accommodate at least one substrate; a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated; a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated; a removal flow path to allow removal of gas from the reaction chamber; a removal flow controller to create a gas flow in the reaction chamber to the removal flow path when the removal flow controller is activated; and, a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. ##STR00001##

A positive resist composition is provided comprising two onium salts, a base polymer comprising acid labile group-containing recurring units, and an organic solvent. The positive resist composition forms a pattern having PED stability and improved properties including DOF, LWR, and controlled footing profile.

According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

A positive-type photosensitive resin composition comprises a (a) polybenzoxazole precursor, a (b) crosslinking agent, a (c) photosensitive agent, and a (d) solvent, wherein the (a) polybenzoxazole precursor comprises a structure represented by Formula (1) below, and the (c) photosensitive agent is a compound comprising a structure represented by Formula (2) below. In Formula (1), U is a bivalent organic group, a single bond, —O—, or —SO.sub.2—, V is a group comprising an aliphatic structure, and the carbon number in the aliphatic structure is 1 to 30. ##STR00001##

A method for producing flexographic printing plates, using as starting material a photopolymerizable flexographic printing element which at least comprises, arranged one atop another, a dimensionally stable support, and at least one photopolymerizable, relief-forming layer, at least comprising an elastomeric binding, an ethylenically unsaturated compound, and a photoinitiator, a digitally imagable layer, and the method comprises at least the following steps (a) producing a mask by imaging the digitally imagable layer, (b) exposing the photopolymerizable, relief-forming layer through the mask with actinic light, and photopolymerizing the image regions of the layer, and (c) developing the photopolymerized layer by washing out the unphotopolymerized regions of the relief-forming layer with an organic solvent, or by thermal development, characterized in that step (b) comprises two or more exposure cycles (b 1) to (b n) with actinic light with an intensity of 100 to 5000 mW/cm.sup.2 from a plurality of UV-LEDs, the energy input into the photopolymerizable, relief-forming layer per exposure cycle being 0.1 to 5 J/cm.sup.2.

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX.sub.3, A.sub.2BX.sub.4, or ABX.sub.4, wherein A is a compound containing an NH.sub.3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.